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零件编号 | DBA40 | ||
描述 | 4.0A Single-Phase Bridge Rectifier | ||
制造商 | Sanyo Semicon Device | ||
LOGO | |||
1 Page
Ordering number:EN649C
DBA40
Diffused Junction Silicon Diode
4.0A Single-Phase Bridge Rectifier
Features
· Plastic molded structure.
· Glass passivation for high reliability.
· Peak reverse voltage:VRM=100 to 400V.
· Average rectified current:IO=4.0A.
Package Dimensions
unit:mm
1089
[DBA40]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
DBA40B DBA40C DBA40E
100 200
400
Ta=40˚C
→→
Ta=40˚C, mounted on 60×60×1.5mm3 AI fin → →
50Hz sine wave, 1cycle
→→
2.6
4.0
80
→→
150
→ → –30 to +150
Electrical Characteristics at Ta = 25˚C, per constituent element of bridge
Parameter
Forward Voltage
Reverse Current
Note:Mounted torque:0.49N·m max.
Symbol
Conditions
VF IF=2.0A
IR VR:At each VRM
Ratings
min typ max
1.05
10
Unit
V
A
A
A
˚C
˚C
Unit
V
µA
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4249MO/1285KI, TS No.649-1/2
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页数 | 2 页 | ||
下载 | [ DBA40.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
DBA40 | 4.0A Single-Phase Bridge Rectifier | Sanyo Semicon Device |
DBA40B | Diode ( Rectifier ) | American Microsemiconductor |
DBA40C | Diode ( Rectifier ) | American Microsemiconductor |
DBA40E | Diode ( Rectifier ) | American Microsemiconductor |
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