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零件编号 | DBA250 | ||
描述 | 25.0A Single-Phase Bridge Rectifier | ||
制造商 | Sanyo Semicon Device | ||
LOGO | |||
1 Page
Ordering number:EN2145B
DBA250
Silicon Diffused Junction Type
25.0A Single-Phase Bridge Rectifier
Features
· Plastic molded structure.
· High reliability attained by glass passivation.
· Peak reverse voltage:VRM=200, 600V.
· Average rectified current:IO=25.0A.
Package Dimensions
unit:mm
1162
[DBA250]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Recitified Current
Symbol
VRM
IO
Surge Forward Current
Junction Temperature
IFSM
Tj
Storage Temperature
Tstg
Insulation Voltage
VIS
Electrical Characteristics at Ta = 25˚C
Conditions
Ta=40˚C
Ta=40˚C, with 300×300×3.0mm3 Cu fin
50Hz sine wave, 1cycle
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Thermal Resistance
VF
IR
Rth(j-c)
Note:Tightening torque : 0.98N·m max.
Note*:Per constituent element of bridge.
IF=12.5A*
VR:At each VRM*
Junction-Case
DBA250C
200
→
→
→
→
→
→
DBA250G
600
6.0
25.0
400
150
–40 to +150
2
Unit
V
A
A
A
˚C
˚C
kV
Ratings
min typ max
Unit
1.05 V
10 µA
1.5 ˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/82595GI (KOTO) 3089MO, TS No.2145-1/2
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页数 | 2 页 | ||
下载 | [ DBA250.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
DBA250 | 25.0A Single-Phase Bridge Rectifier | Sanyo Semicon Device |
DBA250B | Diode ( Rectifier ) | American Microsemiconductor |
DBA250C | Diode ( Rectifier ) | American Microsemiconductor |
DBA250E | Diode ( Rectifier ) | American Microsemiconductor |
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