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PDF ( 数据手册 , 数据表 ) HN29W12811T-60

零件编号 HN29W12811T-60
描述 128M AND type Flash Memory More than 8/029-sector (135/657/984-bit)
制造商 Hitachi Semiconductor
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HN29W12811T-60 数据手册, 描述, 功能
HN29W12811 Series
128M AND type Flash Memory
More than 8,029-sector (135,657,984-bit)
ADE-203-1183C (Z)
Rev. 2.0
Feb. 7, 2001
Description
The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has
fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29W12811 are more than 8,029 (98% of all
sector address).
Features
On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
Organization
AND Flash Memory: (2048 + 64) bytes × (More than 8,029 sectors)
Data register: (2048 + 64) bytes
Multi-level memory cell
2 bit/per memory cell
Automatic programming
Sector program time: 2.5 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function







HN29W12811T-60 pdf, 数据表
HN29W12811 Series
Third bus cycle
Command
Bus Operation Data in
cycles mode
Read
Serial read (1) (Without CA) 3
Write
SA (2)*4
(With CA) 3 + 2h*6 Write
SA (2)*4
Serial read (2)
3 Write SA (2)*4
Read identifier codes
1
Data recovery read
1
Auto erase Single sector
4 Write SA (2)*4
Auto program Program (1) (Without
CA*7)
4
Write
SA (2)*4
(With CA*7) 4 + 2h*6 Write
SA (2)*4
Program (2)*10
4 Write SA (2)*4
Program (3) (Control bytes)*7 4
Write
SA (2)*4
Program (4) (WithoutCA*7) 4
Write
SA (2)*4
(With CA*7) 4 + 2h*6 Write
SA (2)*4
Reset
1
Clear status register
1
Data recovery write
4 Write SA (2)*4
Fourth bus cycle
Operation Data in
mode
Write
CA (1)*5
Write
Write
Write
Write
Write
Write
Write
B0H*11
40H*11, 12
CA (1)
40H*11, 12
40H*11, 12
40H*11, 12
CA (1)
Write
40H*11, 12
8







HN29W12811T-60 equivalent, schematic
HN29W12811 Series
Status Transition
Deep
standby
VCC
RES
Power off
00H/F0H
FFH
CE
Read (1) / (2) SA (1), SA (2)
setup
Column address
input
CA(1)
CA(2)
CA(1)'
CA(2)'
OE
SC
Sector address OE, SC
input
Read (1) / (2)
90H
FFH
CE
ID read setup CDE, OE ID read
20H
FFH
Sector
Erase setup
SA (1), SA (2)
Sector
B0H
address input
BUSY
Erase OE Status register
start read
Erase finish
CE
Standby
Output
disable
10H
/11H
FFH
SA (1),
Program SA (2)
(1)/(4) setup
CA(1)
CA(2)
Column address SC, CDE
input
PD(m)
CA(1)' to
CA(2)' PD(m+j)
PD0 to
PD2111
Sector address
Program
40H
Program
input
data input
SC, CDE
start
Program finish
OE
Status register
read
1FH SA (1),
/0FH Program (2)/(3) SA (2)
setup
FFH
PD0 to
PD2111*3
Sector address
Program
40H
Program
input SC, CDE data input
start
Program finish
Status register clear 50H
OE Status register
read
Program error or
Erase error
CE*2
FFH*2
OE Status register
read
Error CE
standby
*4
ERROR
01H*1 Data recovery OE, SC Data recovery
read setup
read
Output
12H*1
SA(1)
Data recovery SA(2)
Sector address 40H
disable
write setup
FFH
input
OE Status register
read
Notes: 1. (01H)/(12H) Data recovery read/write can be used only for Program (1), (2), (3), (4) errors.
2. When reset is done by CE or FFH, error status flag is cleared.
3. When Program (3) mode, input data is PD2048 to PD2111.
4. When Error standby, ICC3 level is current.
16










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