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零件编号 | HN1K05FU | ||
描述 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type | ||
制造商 | Toshiba Semiconductor | ||
LOGO | |||
1 Page
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K05FU
HN1K05FU
For Portable Devices
High Speed Switching Applications
Interface Applications
Unit: mm
· High input impedance and extremely low drive current.
· Vth is low and it is possible to drive directly at low-voltage CMOS.
: Vth = 0.5 to 1.0 V
· Suitable for high-density mounting because of a compact package.
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: TOTAL rating
Symbol
VDS
VGSS
ID
PD (Note)
Tch
Tstg
Rating
20
10
100
200
150
-55 to 150
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg
―
―
2-2J1C
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance 1
Drain-Source ON resistance 2
Drain-Source ON resistance 3
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Symbol
Test Condition
Min Typ. Max Unit
IGSS
V (BR) DSS
IDSS
Vth
ïYfsï
RDS (ON) 1
RDS (ON) 2
RDS (ON) 3
Ciss
Crss
Coss
ton
toff
VGS = 10 V, VDS = 0 V
ID = 100 mA, VGS = 0 V
VDS = 20 V, VGS = 0 V
VDS = 1.5 V, ID = 0.1 mA
VDS = 1.5 V, ID = 10 mA
ID = 1 mA, VGS = 1.2 V
ID = 10 mA, VGS = 1.5 V
ID = 10 mA, VGS = 2.5 V
VDS = 1.5 V, VGS = 0 V, f = 1 MHz
VDS = 1.5 V, VGS = 0 V, f = 1 MHz
VDS = 1.5 V, VGS = 0 V, f = 1 MHz
VDD = 1.5 V, ID = 10 mA,
VGS = 0 to 1.5 V
VDD = 1.5 V, ID = 10 mA,
VGS = 0 to 1.5 V
¾
20
¾
0.5
35
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
70
15
10
7
12
3.4
12
0.35
0.2
1
¾
1
1
¾
50
40
28
¾
¾
¾
¾
¾
mA
V
mA
V
mS
W
W
W
pF
pF
pF
ms
1 2002-01-16
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页数 | 5 页 | ||
下载 | [ HN1K05FU.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
HN1K05FU | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type | Toshiba Semiconductor |
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