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PDF ( 数据手册 , 数据表 ) HS-4080ARH

零件编号 HS-4080ARH
描述 Radiation Hardened Full Bridge N-Channel FET Driver
制造商 Intersil Corporation
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HS-4080ARH 数据手册, 描述, 功能
Data Sheet
HS-4080ARH
Febuary 2000 File Number 4563.3
Radiation Hardened Full Bridge
N-Channel FET Driver
The HS-4080ARH is a monolithic, high frequency, medium
voltage Full Bridge N-Channel FET Driver IC. The device
includes a TTL-level input comparator, which can be used to
facilitate the “hysteresis” and PWM modes of operation. Its
HEN (high enable) lead can force current to freewheel in the
bottom two external power MOSFETs, maintaining the upper
power MOSFETs off. The HS-4080ARH is well suited for use
in distributed DC power supplies and DC to DC converters,
since it can switch at high frequencies.
These devices can also drive medium voltage motors, and
two HS-4080ARHs can be used to drive high performance
stepper motors, since the short minimum “on-time” can
provide fine micro-stepping capability.
Short propagation delays maximize control loop crossover
frequencies and dead-times, which can be adjusted to near
zero to minimize distortion, resulting in precise control of the
driven load.
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) process, these devices are immune to
Single Event Latch-up and have been specifically designed
to provide highly reliable performance in harsh radiation
environments. Complete your design with radiation
hardened MOSFETs from Intersil.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-99617. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.htm
Pinout
HS-4080ARH (FLATPACK, CDFP3-F20)
TOP VIEW
BHB
HEN
DIS
VSS
OUT
IN+
IN-
HDEL
LDEL
AHB
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
BHO
BHS
BLO
BLS
VDD
VCC
ALS
ALO
AHS
AHO
Features
• Electrically Screened to SMD # 5962-99617
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose . . . . . . . . . . . . . . . . . 300kRAD(Si) (Max)
- Latch-up Immune RSG DI Process
• Drives N-Channel FET Full Bridge Including High Side
Chop Capability
• Bootstrap Supply Max Voltage to 95VDC
• TTL Comparator Input Levels
• Drives 1000pF Load with Rise and Fall Times of 50ns
• User-Programmable Dead Time
• Charge-Pump and Bootstrap Maintain Upper Bias
Supplies
• DIS (Disable) Pin Pulls Gates Low
• Operates From Single Supply . . . . . . . . . . . . . 12V to 18V
• Low Power Consumption
• Undervoltage Protection
Applications
• Full Bridge Power Supplies
• PWM Motion Control
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
5962F9961701VSC
HS9-4080ARH-Q
5962F9961701QSC
HS9-4080ARH-8
HS9-4080ARH/Proto HS9-4080ARH/Proto
TEMP. RANGE
(oC)
-55 to 125
-55 to 125
-55 to 125
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000












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