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PDF ( 数据手册 , 数据表 ) HUFA75645S3S

零件编号 HUFA75645S3S
描述 75A/ 100V/ 0.014 Ohm/ N-Channel/ UltraFET Power MOSFETs
制造商 Fairchild Semiconductor
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HUFA75645S3S 数据手册, 描述, 功能
Data Sheet
HUFA75645P3, HUFA75645S3S
December 2001
75A, 100V, 0.014 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUFA75645P3
HUFA75645S3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.014Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.fairchild.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75645P3
TO-220AB
75645P
HUFA75645S3S
TO-263AB
75645S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75645S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA75645P3, HUFA75645S3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TC
(TC
=
=
12050oCoC, V, VGGSS==1100VV) )(F(Figiguurere22) )
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
100
100
±20
75
65
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
310
2.07
-55 to 175
300
260
W
W/oC
oC
oC
oC
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absol24ute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75645P3, HUFA75645S3S Rev. B







HUFA75645S3S pdf, 数据表
HUFA75645P3, HUFA75645S3S
SABER Electrical Model
REV 21 May 1999
template ta75645 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
d..model dbodymod = (is = 3.00e-12, cjo = 5.32e-9, tt = 7.4e-8, xti = 5, m = 0.68)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 5.55e-9, is = 1e-30, vj=1.0, m = 0.8)
m..model mmedmod = (type=_n, vto = 3.13, kp = 10, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.51, kp = 93, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.65, kp = 0.11, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.2, voff = -2.4)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -2.4, voff = -6.2)
DPLCAP
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -1.8, voff = 0.5)
10
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -1.8)
c.ca n12 n8 = 5.31e-9
c.cb n15 n14 = 5.31e-9
c.cin n6 n8 = 3.56e-9
RSLC2
5
RSLC1
51
ISCL
RDBREAK
72
LDRAIN
DRAIN
2
RLDRAIN
RDBODY
d.dbody n7 n71 = model=dbodymod
- 50 DBREAK
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 5.1e-9
l.lsource n3 n7 = 4.4e-9
GATE
1
ESG
6
8
RDRAIN
+ EVTHRES 16
+ 19 - 21
LGATE
EVTEMP
8
RGATE + 18 - 6
9 20 22
MMED
RLGATE
MSTRO
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
CIN
8
11
MWEAK
EBREAK
+
17
18
-
7
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
RSOURCE
71
DBODY
LSOURCE
SOURCE
3
RLSOURCE
res.rbreak n17 n18 = 1, tc1 = 9.9e-4, tc2 = -1.3e-6
res.rdbody n71 n5 = 1.78e-3, tc1 = 2.25e-3, tc2 = 1.e-5
res.rdbreak n72 n5 = 2.15e-1, tc1 = 8e-4, tc2 = 3e-6
res.rdrain n50 n16 = 7.8e-3, tc1 = 9.4e-3, tc2 = 2.93e-5
res.rgate n9 n20 = 0.83
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 26
res.rlsource n3 n7 = 11
res.rslc1 n5 n51 = 1e-6, tc1 = 2.63e-3, tc2 = 1.05e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 1.65e-3, tc1 = 1e-3, tc2 = 1e-6
res.rvtemp n18 n19 = 1, tc1 = -2.87e-3, tc2 = -2.21e-6
res.rvthres n22 n8 = 1, tc1 = -2.57e-3, tc2 = -7.05e-6
S1A
12 13
8
S2A
14 15
13
S1B
S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RBREAK
17 18
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
spe.ebreak n11 n7 n17 n18 = 115.5
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/205))** 3.5))
}
}
©2001 Fairchild Semiconductor Corporation
HUFA75645P3, HUFA75645S3S Rev. B














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