DataSheet8.cn


PDF ( 数据手册 , 数据表 ) HUFA75343G3

零件编号 HUFA75343G3
描述 75A/ 55V/ 0.009 Ohm/ N-Channel UltraFET Power MOSFETs
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


1 Page

No Preview Available !

HUFA75343G3 数据手册, 描述, 功能
HUFA75343G3, HUFA75343P3, HUFA75343S3S
Data Sheet
December 2001
75A, 55V, 0.009 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery operated products.
Formerly developmental type TA75343.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75343G3
TO-247
75343G
HUFA75343P3
TO-220AB
75343P
HUFA75343S3S
TO-263AB
75343S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75343S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 75A, 55V
• Simulation Models
- Temperature Compensating PSPICE® and SABER™
Models
- Thermal Impedance PSPICE™ and SABER Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev. B







HUFA75343G3 pdf, 数据表
HUFA75343G3, HUFA75343P3, HUFA75343S3S
SABER Electrical Model
REV February 1999
template HUFA75343 n2, n1, n3
electrical n2, n1, n3
{
var i iscl
d..model dbodymod = (is = 2.35e-12, cjo = 6.34e-9, tt = 3.950e-8, m = 0.6)
d..model dbreakmod = ()
LDRAIN
d..model dplcapmod = (cjo = 21.5e-10, is = 1e-30, n = 10, m = 0.730)
m..model mmedmod = (type=_n, vto = 3.30, kp = 5.49, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.87, kp = 145, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.92, kp = 0.050, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.90, voff = -3.90)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -3.90, voff = -6.90)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0.39, voff = 3.39)
DPLCAP
10
RSLC2
5
RSLC1
51
ISCL
RDBREAK
72
DRAIN
2
RLDRAIN
RDBODY
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 3.39, voff = 0.39)
c.ca n12 n8 = 3.95e-9
c.cb n15 n14 = 5.05e-9
c.cin n6 n8 = 2.68e-9
-
ESG
6
8
+
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
GATE
1
LGATE
EVTEMP
RGATE + 18 -
9 20 22
RLGATE
6
l.ldrain n2 n5 = 1e-9
EVTHRES
+ 19 -
8
CIN
50
RDRAIN
16
21
DBREAK
11
MWEAK
MMED
MSTRO
8
EBREAK
+
17
18
-
7
71
DBODY
LSOURCE
SOURCE
3
l.lgate n1 n9 = 2.60e-9
l.lsource n3 n7 = 1.10e-9
RSOURCE
RLSOURCE
k.k1 i(l.lgate) i(l.lsource) = l(l.lgate), l(l.lsource), 0.0085
m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u
S1A
12 13
8
S2A
14 15
13
RBREAK
17 18
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u
S1B
S2B
res.rbreak n17 n18 = 1, tc1 = 1.04e-3, tc2 = 3.43e-7
CA
13 CB
+ + 14
IT
RVTEMP
19
-
res.rdbody n71 n5 = 2.21e-3, tc1 = 2.47e-3, tc2 = 3.97e-11
res.rdbreak n72 n5 = 9.1e-2, tc1 = -2.24e-4, tc2 = 5.23e-6
res.rdrain n50 n16 = 0.70e-3, tc1 = 4.44e-2, tc2 = 8.04e-5
res.rgate n9 n20 = 0.36
EGS
6
8
-
EDS
5
8
-
8
VBAT
+
22
res.rldrain n2 n5 = 10
RVTHRES
res.rlgate n1 n9 = 26.0
res.rlsource n3 n7 = 11.0
res.rslc1 n5 n51 = 1e-6, tc1 = 1.02e-4, tc2 = 2.07e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 4.79e-3, tc1 = 0, tc2 = 0
res.rvtemp n18 n19 = 1, tc1 = -1.93e-3, tc2 = 1.38e-6
res.rvthres n22 n8 = 1, tc1 = -3.49e-3, tc2 = -1.27e-5
spe.ebreak n11 n7 n17 n18 = 58.39
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc = 1
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/609))** 2.5))
}
}
©2001 Fairchild Semiconductor Corporation
HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev. B














页数 10 页
下载[ HUFA75343G3.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
HUFA75343G375A/ 55V/ 0.009 Ohm/ N-Channel UltraFET Power MOSFETsFairchild Semiconductor
Fairchild Semiconductor

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap