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PDF ( 数据手册 , 数据表 ) HUF75545P3

零件编号 HUF75545P3
描述 75A/ 80V/ 0.010 Ohm/ N-Channel/ UltraFET Power MOSFET
制造商 Intersil Corporation
LOGO Intersil Corporation LOGO 


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HUF75545P3 数据手册, 描述, 功能
Data Sheet
HUF75545P3, HUF75545S3S
June 1999 File Number 4738.1
75A, 80V, 0.010 Ohm, N-Channel, UltraFET
Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUF75545P3
Symbol
GATE
SOURCE
HUF75545S3S
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.010Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.semi.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75545P3
TO-220AB
75545P
HUF75545S3S
TO-263AB
75545S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75545S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUF75545P3, HUF75545S3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TC=
(TC=
2150o0CoC, ,VVGGSS==101V0V) )(F(Figiugruere2)2).
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
80
80
±20
75
73
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
270 W
1.8 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300 oC
260 oC
NOTES:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1 CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999







HUF75545P3 pdf, 数据表
HUF75545P3, HUF75545S3S
SABER Electrical Model
REV 21 may 1999
template huf75545 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
d..model dbodymod = (is = 3.6e-12, cjo = 4.6e-9, tt = 3.3e-8, m = 0.55)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 4.8e-9, is = 1e-30, vj=1.0, m = 0.8 )
m..model mmedmod = (type=_n, vto = 3.04, kp = 6, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.5, kp = 105, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.65, kp = 0.12, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5, voff = -3)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -3, voff = -5)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -1.5, voff = 0.5)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -1.5)
c.ca n12 n8 = 5.4e-9
c.cb n15 n14 = 5.3e-9
DPLCAP 5
10
RSLC2
RSLC1
51
ISCL
RDBREAK
72
LDRAIN
DRAIN
2
RLDRAIN
RDBODY
c.cin n6 n8 = 3.4e-9
- 50 DBREAK
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
ESG
6
8
RDRAIN
11
d.dplcap n10 n5 = model=dplcapmod
+ EVTHRES 16
i.it n8 n17 = 1
LGATE
EVTEMP
+ 19 - 21
8
MWEAK
l.ldrain n2 n5 = 1e-9
GATE
1
RGATE + 18 - 6
9 20 22
MMED
EBREAK
+
l.lgate n1 n9 = 5.1e-9
RLGATE
MSTRO
17
l.lsource n3 n7 = 4.4e-9
18
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
CIN
8
-
7
71
DBODY
LSOURCE
SOURCE
3
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
RSOURCE
RLSOURCE
res.rbreak n17 n18 = 1, tc1 = 1.3e-3, tc2 = -1e-6
res.rdbody n71 n5 = 2.1e-3, tc1 = 1.5e-3, tc2 = 5.1e-6
S1A
12 13
8
S2A
14 15
13
RBREAK
17 18
res.rdbreak n72 n5 = 2.3e-1, tc1 = 0, tc2 = -1.8e-5
res.rdrain n50 n16 = 4.8e-3, tc1 = 9e-3, tc2 = 2.8e-5
res.rgate n9 n20 = 0.87
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 51
res.rlsource n3 n7 = 44
res.rslc1 n5 n51 = 1e-6, tc1 = 1.53e-3, tc2 = 2e-5
res.rslc2 n5 n50 = 1e3
S1B
S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
IT
8
RVTEMP
19
-
VBAT
+
22
res.rsource n8 n7 = 1.6e-3, tc1 = 1e-3, tc2 = 1e-6
RVTHRES
res.rvtemp n18 n19 = 1, tc1 = -2.9e-3, tc2 = 5e-7
res.rvthres n22 n8 = 1, tc1 = -2.3e-3, tc2 = -1.2e-5
spe.ebreak n11 n7 n17 n18 = 87.4
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/320))** 3))
}
}
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