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PDF ( 数据手册 , 数据表 ) HUF75337G3

零件编号 HUF75337G3
描述 75A/ 55V/ 0.014 Ohm/ N-Channel UltraFET Power MOSFETs
制造商 Fairchild Semiconductor
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HUF75337G3 数据手册, 描述, 功能
HUF75337G3, HUF75337P3, HUF75337S3S
Data Sheet
December 2001
75A, 55V, 0.014 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75337.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75337G3
TO-247
75337G
HUF75337P3
TO-220AB
75337P
HUF75337S3S
TO-263AB
75337S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75337S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- SPICE and SABER Thermal Impedance Models
Available on the web at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75337G3, HUF75337P3, HUF75337S3S Rev. B







HUF75337G3 pdf, 数据表
HUF75337G3, HUF75337P3, HUF75337S3S
SABER Electrical Model
REV August 1997
template huf75337 n2, n1, n3
electrical n2, n1, n3
{
var i iscl
d..model dbodymod = (is = 1.8e-12, xti = 4.5, cjo = 2.6e-9, tt = 1.1e-7, n = 0.99, m = 0.48)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 2.5e-9, is = 1e-30, n = 1, m = 0.97, vj = 1.45)
m..model mmedmod = (type=_n, vto = 3.2, kp = 2, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.71, kp = 63, is = 1e-30, tox = 1)
DPLCAP
m..model mweakmod = (type=_n, vto = 2.7, kp = 8e-3, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -8, voff = -4)
10
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -4, voff = -8)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0, voff = 1.5)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 1.5, voff = 0)
RSLC2
5
RSLC1
51
ISCL
RDBREAK
72
LDRAIN
DRAIN
2
RLDRAIN
RDBODY
c.ca n12 n8 = 2.4e-9
c.cb n15 n14 = 2.4e-9
c.cin n6 n8 = 1.63e-9
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 3.58e-9
l.lsource n3 n7 = 7.7e-10
GATE
1
-
LGATE
ESG
6
8
+ EVTHRES
+ 19 -
EVTEMP
8
RGATE + 18 - 6
9 20 22
RLGATE
CIN
m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u
S1A
12 13
8
S2A
14 15
13
50
RDRAIN
16
21
DBREAK
11
MWEAK
MMED
MSTRO
8
EBREAK
+
17
18
-
7
RSOURCE
71
DBODY
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17 18
res.rbreak n17 n18 = 1, tc1 = 1.17e-3, tc2 = -1.25e-6
res.rdbody n71 n5 = 3e-3, tc1 = 2e-3, tc2 = 9e-9
res.rdbreak n72 n5 = 9.6e-2, tc1 = 1.5e-3, tc2 = -4.7e-5
res.rdrain n50 n16 = 2.3e-3, tc1 = 1.9e-2, tc2 = 5e-6
res.rgate n9 n20 = 1
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 35.8
res.rlsource n3 n7 = 7.7
res.rslc1 n5 n51 = 1e-6, tc1 = 2.8e-3, tc2 = 1e-9
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 6e-3, tc1 = 1e-3, tc2 = 1e-5
res.rvtemp n18 n19 = 1, tc1 = -2.8e-3, tc2 = 1e-6
res.rvthres n22 n8 = 1, tc1 = -3e-3, tc2 = -3e-6
S1B
S2B
CA
13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
spe.ebreak n11 n7 n17 n18 = 58.5
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc = 1
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/180))** 5.3))
}
}
©2001 Fairchild Semiconductor Corporation
HUF75337G3, HUF75337P3, HUF75337S3S Rev. B














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