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PDF ( 数据手册 , 数据表 ) HUF75309T3ST

零件编号 HUF75309T3ST
描述 3A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFET
制造商 Intersil Corporation
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HUF75309T3ST 数据手册, 描述, 功能
Data Sheet
HUF75309T3ST
June 1999
File Number 4377.3
3A, 55V, 0.070 Ohm, N-Channel UltraFET
Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™ process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75309.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75309T3ST SOT-223
5309
NOTE: HUF75309T3ST is available only in tape and reel.
Features
• 3A, 55V
• Ultra Low On-Resistance, rDS(ON) = 0.070
• Diode Exhibits Both High Speed and Soft Recovery
• Temperature Compensating PSPICE™ Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
SOT-223
SOURCE
DRAIN
GATE
23 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE™ is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999







HUF75309T3ST pdf, 数据表
SPICE Thermal Model
REV December 97
HUF75309T3ST
CTHERM1 7 6 7.5e-5
CTHERM2 6 5 4.0e-4
CTHERM3 5 4 1.7e-3
CTHERM4 4 3 1.5e-2
CTHERM5 3 2 7.1e-2
CTHERM6 2 1 5.9e-1
RTHERM1 7 6 7.0e-2
RTHERM2 6 5 2.7e-1
RTHERM3 5 4 2.0
RTHERM4 4 3 3.5
RTHERM5 3 2 30
RTHERM6 2 1 80
HUF75309T3ST
7 JUNCTION
RTHERM1
RTHERM2
6
5
RTHERM3
RTHERM4
4
RTHERM5
3
RTHERM6
2
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
1 CASE
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
30














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