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PDF ( 数据手册 , 数据表 ) A616316

零件编号 A616316
描述 64K X 16 BIT HIGH SPEED CMOS SRAM
制造商 AMIC Technology
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A616316 数据手册, 描述, 功能
A615308 Series
Preliminary
32K X 8 BIT HIGH SPEED CMOS SRAM
Document Title
32K X 8 BIT HIGH SPEED CMOS SRAM
Revision History
Rev. No. History
0.0 Initial issue
Issue Date
January 17, 2001
Remark
PRELIMINARY (January, 2001, Version 0.0)
AMIC Technology, Inc.







A616316 pdf, 数据表
A615308 Series
Timing Waveforms (continued)
Write Cycle 1(6)
(Write Enable Controlled)
Address
CE (4)
tAS1
WE
DIN
DOUT
tWC
tAW
tCW 5
tWP2
tWR 3
tWHZ7
tDW
tDH
tOW 7
Write Cycle 2
(Chip Enable Controlled)
Address
CE
tWC
tAS1
(4)
tAW
tCW5
tWR3
WE
DIN
DOUT
tWP2
tDW
tWHZ7
tDH
Notes: 1. tAS is measured from the address valid to the beginning of Write.
2. A Write occurs during the overlap (tWP) of a low CE and a low WE .
3. tWR is measured from the earliest of CE or WE going high to the end of the Write cycle
4. If the CE low transition occurs simultaneously with the WE low transition or after the WE transition, outputs
remain in a high impedance state.
5. tCW is measured from the later of CE going low to the end of Write.
6. OE is continuously low. ( OE = VIL)
7. Transition is measured ±200mV from steady state. This parameter is sampled and not 100% tested.
PRELIMINARY (January, 2001, Version 0.0)
7
AMIC Technology, Inc.














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