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零件编号 | A42L2604V-45U | ||
描述 | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE | ||
制造商 | AMIC Technology | ||
LOGO | |||
1 Page
A42L2604 Series
Preliminary
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Document Title
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Revision History
Rev. No.
0.0
0.1
0.2
0.3
History
Initial issue
Modify symbol HE dimensions in TSOP 24L package information
Add -45 grade and modify the AC, DC data
Add -U type spec.
Modify DC data and all parts guarantee self-refresh mode
Issue Date
June 13, 2001
July 10, 2001
November 30, 2001
June 10, 2002
Remark
Preliminary
PRELIMINARY (June, 2002, Version 0.3)
AMIC Technology, Inc.
A42L2604 Series
AC Characteristics (continued) (VCC = 3.3V ± 0.3V, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)
Test Conditions:
Input timing reference level: VIH/VIL=2.0V/0.8V
Output reference level: VOH/VOL=2.0V/0.8V
Output Load: 2TTL gate + CL (50pF)
Assumed tT=2ns
Std
# Symbol
Parameter
20 tRRH Read Command Hold Time Reference to RAS
21 tRAL Column Address to RAS Lead Time
22 TCOH Output Hold After CAS Low
23 tOFF Output Buffer Turn-Off Delay Time
24 tASC Column Address Setup Time
25 tCAH Column Address Hold Time
26 tOES OE Low to CAS High Set Up
27 tWCS Write Command Setup Time
28 tWCH Write Command Hold Time
29 tWCR Write Command Hold Time to RAS
30 tWP Write Command Pulse Width
31 tRWL Write Command to RAS Lead Time
32 tCWL Write Command to CAS Lead Time
33 tDS Data-in setup Time
34 tDH Data-in Hold Time
35 tDHR Data-in Hold Time to RAS
36 tRWC Read-Modify-Write Cycle Time
37 tRWD RAS to WE Delay Time (Read-Modify-Write)
38 tCWD CAS to WE Delay Time (Read-Modify-Write)
-45
Min. Max.
0-
20 -
2-
-2
0-
7-
10 -
0-
7-
40 -
7-
12 -
7-
0-
7-
40 -
104 -
59 -
26 -
-50
Min. Max.
0-
22 -
3-
-3
0-
8-
10 -
0-
8-
45 -
8-
13 -
8-
0-
8-
45 -
114 -
65 -
28 -
Unit Notes
ns 9
ns
ns
ns 8, 10
ns
ns
ns
ns 11
ns 11
ns
ns
ns
ns
ns
ns
ns
ns
ns 11
ns 11
39 tAWD Column Address to WE Delay Time
(Read-Modify-Write)
34 - 37 - ns 11
PRELIMINARY (June, 2002, Version 0.3)
7
AMIC Technology, Inc.
EDO Page Mode Early Word Write Cycle
A42L2604 Series
RAS
CAS
Address
WE
OE
I/O 0 ~
I/O 3
tCRP(9)
tRASP(47)
tRP(2)
tCSH(8)
tRCD(5)
tCAS(4)
tCP(44)
tPC(42)
tCAS(4)
tCP(44)
tRSH(7)
tCAS(4)
tCRP(9)
tASR(10)
tRAD(6)
tRAH(11)
tASC(24)
Row
tWCS(27)
tCAH(25)
tASC(24)
Column
tCWL(32)
tWCS(27)
tWCH(28)
tRAL(21)
tCAH(25)
tASC(24)
Column
tCAH(25)
Column
tCWL(32)
tWCS(27)
tWCH(28)
tCWL(32)
tRWL(31)
tWCH(28)
tWP(30)
tWP(30)
tWP(30)
tDS(33)
Data-in
tDH(34)
tDS(33)
tDH(34)
tDS(33)
Data-in
tDH(34)
Data-in
: High or Low
PRELIMINARY (June, 2002, Version 0.3)
15
AMIC Technology, Inc.
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页数 | 25 页 | ||
下载 | [ A42L2604V-45U.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
A42L2604V-45 | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE | AMIC Technology |
A42L2604V-45U | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE | AMIC Technology |
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