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零件编号 | A420616S-50 | ||
描述 | 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE | ||
制造商 | AMIC Technology | ||
LOGO | |||
1 Page
A420616 Series
Preliminary
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Document Title
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Revision History
Rev. No.
0.0
0.1
0.2
History
Initial issue
Modify AC, DC data
Modify DC data and all parts guarantee self-refresh mode
Issue Date
June 23, 1999
February 7, 2002
June 10, 2002
Remark
Preliminary
PRELIMINARY (June, 2002, Version 0.2)
AMIC Technology, Inc.
A420616 Series
AC Characteristics (continued) (VCC = 5.0V ± 10%, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)
Test Conditions:
Input timing reference level: VIH/VIL=2.4V/0.8V
Output reference level: VOH/VOL=2.0V/0.8V
Output Load: 2TTL gate + CL (50pF)
Assumed tT=2ns
Std
# Symbol
Parameter
-45
Min. Max.
-50
Min. Max.
Unit Notes
20 tRRH Read Command Hold Time Reference to RAS 0 - 0 - ns 9
21 tRAL Column Address to RAS Lead Time
20 - 22 - ns
22 tCOH Output Hold After CAS Low
2 - 3 - ns
23 tOFF Output Buffer Turn-Off Delay Time
- 2 - 3 ns 8, 10
24 tASC Column Address Setup Time
0 - 0 - ns
25 tCAH Column Address Hold Time
7 - 8 - ns
26 tOES OE Low to CAS High Set Up
10 - 10 - ns
27 tWCS Write Command Setup Time
0 - 0 - ns 11
28 tWCH Write Command Hold Time
7 - 8 - ns 11
29 tWCR Write Command Hold Time to RAS
40 - 45 - ns
30 tWP Write Command Pulse Width
7 - 8 - ns
31 tRWL Write Command to RAS Lead Time
12 - 13 - ns
32 tCWL Write Command to CAS Lead Time
7 - 8 - ns
33 tDS Data-in setup Time
0 - 0 - ns 12
34 tDH Data-in Hold Time
7 - 8 - ns 12
35 tDHR Data-in Hold Time to RAS
40 - 45 - ns
36 tRWC Read-Modify-Write Cycle Time
104 - 114 -
ns
37 tRWD RAS to WE Delay Time (Read-Modify-Write)
59 - 65 - ns 11
38 tCWD CAS to WE Delay Time (Read-Modify-Write)
26 - 28 -
ns 11
PRELIMINARY (June, 2002, Version 0.2)
7
AMIC Technology, Inc.
EDO Page Mode Early Word Write Cycle
A420616 Series
RAS
UCAS
LCAS
Address
WE
OE
I/O 0 ~
I/O 15
tCRP(9)
tRASP(47)
tRP(2)
tCSH(8)
tRCD(5)
tCAS(4)
tCP(44)
tPC(42)
tCAS(4)
tCP(44)
tRSH(7)
tCAS(4)
tCRP(9)
tASR(10)
tRAD(6)
tRAH(11)
tASC(24)
Row
tWCS(27)
tCAH(25)
tASC(24)
Column
tCWL(32)
tWCS(27)
tWCH(28)
tRAL(21)
tCAH(25)
tASC(24)
Column
tCAH(25)
Column
tCWL(32)
tWCS(27)
tWCH(28)
tCWL(32)
tRWL(31)
tWCH(28)
tWP(30)
tWP(30)
tWP(30)
tDS(33)
Data-in
tDH(34)
tDS(33)
tDH(34)
tDS(33)
tDH(34)
Data-in
Data-in
: High or Low
PRELIMINARY (June, 2002, Version 0.2)
15
AMIC Technology, Inc.
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页数 | 25 页 | ||
下载 | [ A420616S-50.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
A420616S-50 | 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE | AMIC Technology |
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