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PDF ( 数据手册 , 数据表 ) A3212ELHLT

零件编号 A3212ELHLT
描述 MICROPOWER/ ULTRA-SENSITIVE HALL-EF FECT SWITCH
制造商 Allegro MicroSystems
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A3212ELHLT 数据手册, 描述, 功能
A3212
Package Sufx ‘LH’ Pinning
(SOT23W)
3
V
DD
1
2
Dwg. PH-016-1
Pinning is shown viewed from branded side.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, VDD .............................. 5 V
Magnetic Flux Density, B .......... Unlimited
Output Off Voltage, VOUT ...................... 5 V
Output Current, IOUT ........................... 1 mA
Junction Temperature, TJ ................ +170°C
Operating Temperature, TA
Range 'E-' .................... -40°C to +85°C
Range 'L-' .................. -40°C to +150°C
Storage Temperature Range,
TS .............................. -65°C to +170°C
Caution: These CMOS devices have input
static protection (Class 3) but are still sus-
ceptible to damage if exposed to extremely
high static electrical charges.
MICROPOWER, ULTRA-SENSITIVE
HALL-EFFECT SWITCH
The A3212 integrated circuit is an ultra-sensitive, pole independent Hall-
effect switch with a latched digital output. This sensor is especially suited for
operation in battery-operated, hand-held equipment such as cellular and cordless
telephones, pagers, and palmtop computers. A 2.5 volt to 3.5 volt operation and a
unique clocking scheme reduce the average operating power requirements to less
than 15 µW with a 2.75 volt supply.
Unlike other Hall-effect switches, either a north or south pole of sufcient
strength will turn the output on; in the absence of a magnetic eld, the output
is off. The polarity independence and minimal power requirement allow these
devices to easily replace reed switches for superior reliability and ease of manu-
facturing, while eliminating the requirement for signal conditioning.
Improved stability is made possible through chopper stabilization (dynamic
offset cancellation), which reduces the residual offset voltage normally caused
by device overmolding, temperature dependencies, and thermal stress.
This device includes on a single silicon chip a Hall-voltage generator,
small-signal amplier, chopper stabilization, a latch, and a MOSFET output.
Advanced BiCMOS processing is used to take advantage of low-voltage and
low-power requirements, component matching, very low input-offset errors, and
small component geometries.
Three package styles provide a magnetically optimized package for most ap-
plications. Package sufxes 'EH' and ‘LH’ are for miniature low-prole (lead-
less and leaded, respectively) surface-mount packages while sufx ‘UA’ is for
a three-lead SIP for through-hole mounting. Each package is available in a lead
(Pb) free version (sufx, –T) with 100% matte tin plated leadframe.
FEATURES
Micropower Operation
Operation with North or South Pole
2.5 V to 3.5 V Battery Operation
Chopper Stabilized
Superior Temperature Stability
Extremely Low Switch-Point Drift
Insensitive to Physical Stress
ESD Protected to 5 kV
Solid-State Reliability
Small Size
Easily Manufacturable with Magnet Pole Independence







A3212ELHLT pdf, 数据表
A3212
MICROPOWER,
ULTRA-SENSITIVE
HALL-EFFECT SWITCH
SENSOR LOCATIONS
Package Designator 'EH'
ACTIVE AREA DEPTH
0.013"
0.34 mm
NOM
0.035"
0.88 mm
654
0.062"
1.56 mm
BRANDED
SURFACE
A
1
2
3
Dwg. MH-030
Package Designator 'LH'
ACTIVE AREA DEPTH
0.011"
0.28 mm
NOM
0.056"
1.42 mm
3
0.033"
0.84 mm
A
1
2
Dwg. MH-025-2
Package Designator 'UA'
ACTIVE AREA DEPTH
0.0195"
0.50 mm
NOM
0.078"
1.98 mm
0.052"
1.32 mm
A
BRANDED
SURFACE
1
2
3
Dwg. MH-011-13
115 Northeast Cutoff, Box 15036
8 Worcester, Massachusetts 01615-0036 (508) 853-5000














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