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PDF ( 数据手册 , 数据表 ) 1MBI200NK-060

零件编号 1MBI200NK-060
描述 IGBT MODULE ( N series )
制造商 Fuji Electric
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1MBI200NK-060 数据手册, 描述, 功能
IGBT MODULE ( N series )
n Outline Drawing
n Features
Square RBSOA
Low Saturation Voltage
Overcurrent Limiting Function (~3 Times Rated Current)
n Maximum Ratings and Characteristics
n Equivalent Circuit
Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
VCES
600 V
Gate -Emitter Voltage
VGES
± 20 V
Collector
Current
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
200
400 A
200
400
Max. Power Dissipation
Operating Temperature
PC 780 W
Tj
+150
°C
Storage Temperature
Tstg -40 +125 °C
Isolation Voltage
Screw Torque
A.C. 1min.
Vis
Mounting *1
Terminals *1
2500
3.5
3.5
V
Nm
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5)
Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
ICES
IGES
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
Diode Forward On-Voltage
VF
Reverse Recovery Time
Reverse Currrent
trr
IRRM
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=200mA
VGE=15V IC=200A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=200A
VGE=± 15V
RG=9.1
IF=200A VGE=0V
IF=200A
VR=600V
Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min. Typ.
4.5
13200
2930
1330
0.6
0.2
0.6
0.2
Max.
2.0
30
7.5
2.8
1.2
0.6
1.0
0.35
3.0
300
2.0
Units
mA
µA
V
V
pF
µs
V
ns
mA
Min.
Typ.
0.025
Max.
0.16
0.35
Units
°C/W












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