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PDF ( 数据手册 , 数据表 ) AJT006

零件编号 AJT006
描述 NPN SILICON RF POWER TRANSISTOR
制造商 Advanced Semiconductor
LOGO Advanced Semiconductor LOGO 


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AJT006 数据手册, 描述, 功能
AJT006
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AJT006 is Designed for
FEATURES:
Input Matching Network
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 0.9 A
VCC
PDISS
TJ
TSTG
θJC
32V
25 W @ TC 75 OC
-65 OC to +250 OC
-65 OC to +200 OC
7.0 OC/W
PACKAGE STYLE .310 2L FLG
4x .062 x 45°
2xB
ØE
D
A .040 x 45°
C
F
G
I
M
H
J
K
L
R
NP
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .095 / 2.41
.105 / 2.67
B .100 / 2.54
.120 / 3.05
C .050 / 1.27
D .286 / 7.26
.306 / 7.77
E .110 / 2.79
.130 / 3.30
F .306 / 7.77
.318 / 8.08
G .148 / 3.76
H .400 / 10.16
I .119 / 3.02
J .552 / 14.02
.572 / 14.53
K .790 / 20.07
.810 / 20.57
L .300 / 7.62
.320 / 8.13
M .003 / 0.08
.006 / 0.15
N .052 / 1.32
.072 / 1.83
P .118 / 3.00
.131 / 3.33
R .230 / 5.84
ORDER CODE: ASI10544
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 1 mA
BVCER
IC = 5 mA
RBE = 10
BVEBO
IE = 1 mA
ICES VCE = 28 V
hFE
VCE = 5.0 V
IC = 250 mA
MINIMUM TYPICAL MAXIMUM
48
48
3.5
0.5
30 300
UNITS
V
V
V
mA
---
PG
ηC
VCC = 45 V POUT = 6.0 W
f = 960-1215 MHz
9.3
40
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1












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