|
|
零件编号 | BF1005SR | ||
描述 | Silicon N-Channel MOSFET Tetrode | ||
制造商 | Infineon Technologies AG | ||
LOGO | |||
1 Page
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1 GHz
• Operating voltage 5 V
• Integrated biasing network
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BF1005S...
AGC
RF
Input
Drain RF Output
G2 + DC
G1
GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF1005S
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF1005SR
SOT143R 1=D 2=S 3=G1 4=G2 -
-
Marking
NZs
NZs
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS ≤ 76 °C
Storage temperature
Channel temperature
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
8
25
10
3
200
-55 ... 150
150
V
mA
V
mW
°C
1Pb-containing package may be available upon special request
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 2007-04-20
BF1005S...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
8 2007-04-20
|
|||
页数 | 8 页 | ||
下载 | [ BF1005SR.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
BF1005S | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens Semiconductor Group |
BF1005S | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
BF1005SR | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
BF1005SW | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |