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PDF ( 数据手册 , 数据表 ) BDW53

零件编号 BDW53
描述 NPN SILICON POWER DARLINGTONS
制造商 Power Innovations Limited
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BDW53 数据手册, 描述, 功能
Copyright © 1997, Power Innovations Limited, UK
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
q Designed for Complementary Use with
BDW54, BDW54A, BDW54B, BDW54C and
BDW54D
q 40 W at 25°C Case Temperature
q 4 A Continuous Collector Current
q Minimum hFE of 750 at 3 V, 1.5 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TA
45
60
80
100
120
45
60
80
100
120
5
4
50
40
2
25
-65 to +150
-65 to +150
-65 to +150
V
V
V
A
mA
W
W
mJ
°C
°C
°C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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