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PDF ( 数据手册 , 数据表 ) BGA425

零件编号 BGA425
描述 Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable)
制造商 Siemens Semiconductor Group
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BGA425 数据手册, 描述, 功能
Si-MMIC-Amplifier in SIEGET® 25-Technologie
Preliminary data
Multifunctional casc. 50 block (LNA / MIX)
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz (appl.1)
gain |S21|2 = 22 dB at 1.8 GHz (appl.2)
IP3out = +7 dBm at 1.8 GHz (VD=3V,ID=9.5mA)
Noise figure NF = 2.2 dB at 1.8 GHz
Reverse isolation >28 dB (appl.1) >35 dB (appl.2)
typical device voltage VD = 2 V to 5 V
Tape loading orientation
BGA 425
3
4
2
1 VPS05605
Circuit Diagram
6 +V
3 OUTA
4
IN
1 OUTB
ESD: Electrostatic discharge sensitive device,
observe handling precaution!
2, 5
GND
PIN Configuration
Type
Marking Ordering Code Package 1, Out B 2, GND
BGA 425 BMs Q62702-G0058 SOT-343 4, IN
5, GND
EHA07371
3, Out A
6, +V
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, TS tbd °C
RF input power
Junction temperature
Ambient temperature
Storage temperature
Symbol
ID
VD,+V
Ptot
PRFin
Tj
TA
Tstg
Value
25
6
150
-10
150
-65 ...+150
-65 ...+150
Unit
mA
V
mW
dBm
°C
Thermal Resistance
Junction - soldering point 1)
RthJS
tbd
K/W
1) TS is measured on the ground lead at the soldering point to the pcb
SSeemmicioconndduuctcotor rGGrorouupp
11
Jul1-91948--11919-081







BGA425 pdf, 数据表
BGA 425
Insertion power gain |S21|2 = f (f)
Noise figure NF = f (f)
VD, ID = parameter
35
dB
25
20
15
10
5
0
10
-1
VD=5V, ID=17.5mA
VD=4V, ID=13.3mA
VD=3V, ID=9.5mA
VD=2V, ID=5.2mA
10 0
GHz
10 1
f
VD,ID = parameter
5.0
dB
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
-1
VD=5V, ID=17.5mA
VD=3V, ID=9.5mA
10 0
GHz
10 1
f
Intercept point at the output
IP3out = f (f)
VD,ID = parameter
20
dBm
16
VD=5V, ID=17.5mA
VD=4V, ID=13,3mA
VD=3V, ID=9.5mA
VD=2V, ID=5.2mA
14
12
10
8
6
4
2
0
10
-1
10 0
GHz
10 1
f
SSeemmicioconndduuctcotor rGGrorouupp
88
Jul1-91948--11919-081














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