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零件编号 | BT131W | ||
描述 | Triacs logic level | ||
制造商 | NXP Semiconductors | ||
LOGO | |||
1 Page
Philips Semiconductors
Triacs
logic level
Product specification
BT131W series
GENERAL DESCRIPTION
Glass passivated, sensitive gate triacs
in a plastic envelope suitable for
surface mounting, intended for use in
general purpose bidirectional
switching and phase control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. UNIT
VDRM
IT(RMS)
ITSM
BT131W- 500 600
Repetitive peak off-state voltages
500 600
RMS on-state current
11
Non-repetitive peak on-state current 10 10
V
A
A
PINNING - SOT223
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
PIN CONFIGURATION
4
123
SYMBOL
T2
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave; Tsp ≤ 108 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 1.5 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
over any 20 ms period
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500
5001
-600
6001
1
10
11
0.5
50
50
50
10
2
5
5
0.5
150
125
UNIT
V
A
A
A
A2s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
July 1998
1 Rev 1.000
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页数 | 7 页 | ||
下载 | [ BT131W.PDF 数据手册 ] |
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