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零件编号 | BUZ272 | ||
描述 | SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | ||
制造商 | Siemens Semiconductor Group | ||
LOGO | |||
1 Page
BUZ 271
SIPMOS ® Power Transistor
• P channel
• Enhancement mode
• Avalanche rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 271
VDS
-50 V
ID
-22 A
RDS(on)
0.15 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 26 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = -22 A, VDD = -25 V, RGS = 25 Ω
L = 413 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1453-A2
Values
-22
Unit
A
-88
mJ
200
± 20
125
-55 ... + 150
-55 ... + 150
≤1
≤ 75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
BUZ 271
Avalanche energy EAS = ƒ(Tj)
parameter: ID = -22 A, VDD = -25 V
RGS = 25 Ω, L = 413 µH
220
mJ
EAS 180
160
140
120
100
80
60
40
20
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
-60
V
V(BR)DSS-57
-56
-55
-54
-53
-52
-51
-50
-49
-48
-47
-46
-45
-60 -20 20 60 100 °C 160
Tj
Semiconductor Group
8
07/96
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页数 | 9 页 | ||
下载 | [ BUZ272.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
BUZ27 | main ratings | Siemens Semiconductor Group |
BUZ271 | SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | Siemens Semiconductor Group |
BUZ272 | SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | Siemens Semiconductor Group |
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