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零件编号 | BUZ21L | ||
描述 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) | ||
制造商 | Siemens Semiconductor Group | ||
LOGO | |||
1 Page
BUZ 21 L
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 21 L
VDS
100 V
ID
21 A
RDS(on)
0.085 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 21 A, VDD = 25 V, RGS = 25 Ω
L = 340 µH, Tj = 25 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Vgs
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1338-A2
Values
21
84
21
11.5
Unit
A
mJ
100
± 14
± 20
75
-55 ... + 150
-55 ... + 150
≤ 1.67
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
01/97
BUZ 21 L
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 21 A, VDD = 25 V
RGS = 25 Ω, L = 340 µH
110
mJ
EAS 90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 32 A
16
V
VGS
12
10
8
0,2 VDS max
0,8 VDS max
6
4
2
0
0 10 20 30 40 50 60 70 80 nC 100
QGate
120
V
116
V(BR)DSS114
112
110
108
106
104
102
100
98
96
94
92
90
-60 -20 20 60 100 °C 160
Tj
Semiconductor Group
8
01/97
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页数 | 8 页 | ||
下载 | [ BUZ21L.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
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