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PDF ( 数据手册 , 数据表 ) BUZ11AL

零件编号 BUZ11AL
描述 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
制造商 Siemens Semiconductor Group
LOGO Siemens Semiconductor Group LOGO 


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BUZ11AL 数据手册, 描述, 功能
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
BUZ 11 AL
Not for new design
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 11 AL
VDS
50 V
ID
26 A
RDS(on)
0.055
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 30 A, VDD = 25 V, RGS = 25
L = 15.6 µH, Tj = 25 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Vgs
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1330-A3
Values
26
104
30
1.9
Unit
A
mJ
14
± 14
± 20
75
-55 ... + 150
-55 ... + 150
1.67
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96







BUZ11AL pdf, 数据表
BUZ 11 AL
Not for new design
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 30 A, VDD = 25 V
RGS = 25 , L = 15.6 µH
15
mJ
EAS 12
11
10
9
8
7
6
5
4
3
2
1
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 39 A
16
V
VGS
12
10
8 0,2 VDS max
6
0,8 VDS max
4
2
0
0 10 20 30 40 50 60 70 nC 90
QGate
60
V
V(BR)DSS 57
56
55
54
53
52
51
50
49
48
47
46
45
-60 -20 20 60 100 °C 160
Tj
Semiconductor Group
8
07/96














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