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零件编号 | BUZ103AL | ||
描述 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated) | ||
制造商 | Siemens Semiconductor Group | ||
LOGO | |||
1 Page
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• dv/dt rated
• Low on-resistance
• 175 °C operating temperature
• also in TO-220 SMD available
BUZ 103AL
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 103AL
VDS
50 V
ID
35 A
RDS(on)
0.05 Ω
Package
TO-220 AB
Ordering Code
C67078-S1357-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 29 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 35 A, VDD = 25 V, RGS = 25 Ω
L = 81 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 35 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Vgs
Ptot
Values
35
140
100
6
± 14
± 20
120
Unit
A
mJ
kV/µs
V
W
Semiconductor Group
1
07/96
BUZ 103AL
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 35 A, VDD = 25 V
RGS = 25 Ω, L = 81 µH
110
mJ
EAS 90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 °C 180
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 52 A
16
V
VGS
12
10
8
0,2
V
DS
max
6
0,8
V
DS
max
4
2
0
0 10 20 30 40 50 nC 65
QGate
62
V
60
V(BR)DSS 59
58
57
56
55
54
53
52
51
50
49
48
47
-60
-20
20
60 100 °C 180
Tj
Semiconductor Group
8
07/96
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页数 | 9 页 | ||
下载 | [ BUZ103AL.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
BUZ103AL | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated) | Siemens Semiconductor Group |
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