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PDF ( 数据手册 , 数据表 ) N1114LC160

零件编号 N1114LC160
描述 Phase Control Thyristor
制造商 IXYS
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N1114LC160 数据手册, 描述, 功能
Date:- 02 August 2012
Data Sheet Issue:- 2
Phase Control Thyristor
Types N1114LC120 to N1114LC180
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1200-1800
1200-1800
1200-1800
1300-1900
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
VGD
THS
Tstg
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current. Tsink=25°C, (note 2)
D.C. on-state current. Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=2000A, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM, Tcase=125°C.
MAXIMUM
LIMITS
1114
756
450
2214
1885
12.7
14.0
806×103
980×103
500
1000
5
4
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Types N1114LC120 to N1114LC180 Issue 2
Page 1 of 10
August 2012







N1114LC160 pdf, 数据表
Phase Control Thyristor Types N1114LC120 to N1114LC180
Figure 9 - On-state characteristics of Limit device
10000
Figure 10 - Transient Thermal Impedance
0.1
SSC 0.064K/W
Tj = 25°C
Tj = 125°C
DSC 0.032K/W
1000
0.01
100
0.5
NN11111144LLCS112200--118800
IIssssuuee 21
1 1.5 2 2.5 3 3.5 4
Instantaneous On-state voltage - VTM (V)
4.5
Figure 11 - Gate Characteristics - Trigger Limits
7
NN1111141L4SL1C2102-01-81080
IsIssuseue1 2
Tj=25°C
6
5
Max VG dc
4
IGT, VGT
3
2
1
IGD, VGD
0
0
Min VG dc
0.1 0.2 0.3 0.4 0.5
Gate Trigger Current - IGT (A)
0.6
0.001
0.001
0.01
NN11141L4CLS112200-1-18800
IsIssusuee21
0.1 1
Time (s)
10 100
Figure 12 - Gate Characteristics - Power Curves
20
N1N111141L4SL1C2102-01-81080
IsIssuseue1 2
18 Tj=25°C
16
Max VG dc
14
12
10
8
PG Max 30W dc
6
4
PG 4W dc
2
Min VG dc
0
0 2 4 6 8 10
Gate Trigger Current - IGT (A)
Data Sheet. Types N1114LC120 to N1114LC180 Issue 2
Page 8 of 10
August 2012














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