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PDF ( 数据手册 , 数据表 ) H0500KC25N

零件编号 H0500KC25N
描述 Fast Symmetrical Gate Turn-Off Thyristor
制造商 IXYS
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H0500KC25N 数据手册, 描述, 功能
WESTCODE
An IXYS Company
Date:- 4 Aug, 2004
Data Sheet Issue:- 2
Fast Symmetrical Gate Turn-Off Thyristor
Type H0500KC25#
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
2500
2600
100-2000
100-2000
UNITS
V
V
V
V
ITGQM
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tjop
Tstg
RATINGS
Maximum peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQM, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6)
Minimum permissible off-time, ITM=ITGQM, (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=20A/µs, CS=3µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
500
0.3
540
280
3.0
5.4
45
1000
160
5
100
18
60
10
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
kA2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Type H0500KC25# Issue 2
Page 1 of 15
August, 2004







H0500KC25N pdf, 数据表
WESTCODE An IXYS Company
tgq
tf
0.9
Fast Symmetrical Gate Turn-Off Thyristor type H0500KC25#
VDM
ITGQ
0.1
IGQ
QGQ
VD
0.1
VG(AV)
VGQ
VGR
tgw
Diagram 11, Turn-off parameter definitions.
In addition to the turn-off figures given in characteristic data, the curves of figures 10, 11 & 12 give the
relationship of IGQ QGQ and tgq to turn-off current (ITGQ) and diGQ/dt. Only typical values of IGQ are given due
to a great dependence upon the gate circuit impedance, which is a function of gate drive design not the
device. The tgq is also, to a lesser extent, affected by circuit impedance and as such the maximum figures
given in data assume a good low impedance circuit design. The curves of figures 17 & 18 give the tail time
and minimum off time to re-fire device as a function of turn-off current. The minimum off time to re-fire the
device is distinct from tgw, the gate off time given in characteristics. The GTO thyristor may be safely re-
triggered when a small amount of tail current is still flowing. In contrast, the gate circuit must remain low
impedance until the tail current has fallen to zero or below a level which the higher impedance VGR circuit
can sink without being pulled down below –2 Volts. If the gate circuit is to be switched to a higher
impedance before the tail current has reached zero then the requirements of diagram 12 must be applied.
i tail
R
(VGR - itail R)>2V
Diagram 12.
VGR
The figure tgw, as given in the characteristic data, is the maximum time required for the tail current to
decay to zero. The figure is applicable under all normal operating conditions for the device; provided
suitable gate drive is employed. At lower turn-off current, or with special gate drive considerations, this
time may be reduced (each case needs to be considered individually).Typical turn-off losses are given in
the curves of figures 13 & 14, the integration period for the losses is nominally taken to the end of the tail
time (Itail<1A) i.e. :-
tgt +ttail
Eoff = iv.dt.
0
Data Sheet. Type H0500KC25# Issue 2
Page 8 of 15
August, 2004














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