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PDF ( 数据手册 , 数据表 ) MCR1000-6

零件编号 MCR1000-6
描述 SILICON CONTROLLED RECTIFIERS
制造商 Digitron Semiconductors
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MCR1000-6 数据手册, 描述, 功能
MCR1000 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Rating
Peak forward reverse blocking voltage
MCR1000-4
MCR1000-6
MCR1000-8
Forward current RMS (all conduction angles, TC = 25°C)
Peak forward surge current (1/2 cycle, sine wave, 60 Hz, TJ = 125°C)
Circuit fusing considerations (TJ = 0 to +125°C, t = 1 to 8.3ms)
Forward peak gate voltage
Forward peak gate current
Operating junction temperature range
Storage temperature range
Symbol
VDRM,
VRRM
IT(RMS)
ITSM
I2t
VGM
IGM
TJ
Tstg
Value
200
400
600
15
90
34
±20
1.5
0 to +125
-65 to +150
Unit
Volts
Amps
Amps
A2s
Volts
Amps
°C
°C
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Thermal resistance, junction to case
RӨJC
Maximum
1.67
Unit
°C/W
ELECTRICAL CHARACTERISTICS(RGK = 1000Ω)
Characteristic
Peak forward blocking current
(Rated VDRM @ TJ = 125°C)
Peak reverse blocking current
(Rated VRRM @ TJ = 125°C)
Peak reverse blocking voltage
Forward “on” voltage (ITM = 20A peak)
Gate trigger voltage (continuous dc)
(VAK = 12Vdc, RL = 100Ω)
(VAK = Rated VDRM, RL = 100Ω, TJ = 125°C)
Holding current
(VAK = 12Vdc)
Turn on time
See Figure 6
Turn off time (VDRM = rated voltage)
(ITM = 3.0A, IR = 2.0A, dv/dt = 100V/µs)
Forward voltage application rate
(TJ = 125°C, RGK ≤ 200Ω) (Figure 7)
Maximum rate of change of on state current
(Rated VDRM, ITM = 20A, TJ = 125°C)
Symbol
IDRM
IRRM
VRRM
VTM
Min Typ. Max
- - 2.0
- - 2.0
- - 100
- 3.5 4.0
VGT
VGD
IH
tgt
tq
dv/dt
di/dt
- 2.0 2.5
0.2 -
-
- 10 40
- - 200
- 6.0 8.0
1000
-
-
- - 100
Unit
mA
mA
Volts
Volts
Volts
mA
ns
µs
V/µs
A/µs
Rev. 20130128












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