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零件编号 | CV9790 | ||
描述 | AMPLIFIER TRANSISTOR | ||
制造商 | Motorola Semiconductors | ||
LOGO | |||
1 Page
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @Ta = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
ic
PD
Tj. T stg
Value
60
60
5
0.6
0.5
3.43
-55 to +175
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mA, Ib = 0)(D
Collector Cutoff Current
(VcB = 50 V, Ie = 0)
(VCB = 50 V, IE = 0- Ta
100°C)
Emitter-Base Cutoff Current
(V E B = 3 V. CI = 0)
(Veb = 5 V, Ic = 0)
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
(IC = 1 50 mA, Ib = 15 mA)(1)
Emitter-Base Saturation Voltage
(IC = 30 mA, Ib = 1 mA)(1)
(IC = 150 mA, Ib = 15 mA H>
DC Current Gain
(VcE = 10 V, Ic = 10 mA)(1)
IC = 1 50 mA)(1)
IC = 1 mA)
IC = 50 mA)
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
(Vce = 20 V, Ic = 50 mA, f = 100 MHz)
Output Capacita/ice
(Vcb = 1° V- E] = O.f = 1 MHz)
(1) Pulsed: Pulse Duration = 300 us. Duty Cycle = 1%.
CV9790
CASE 79, STYLE 1
TO-39 (TO-205AD)
AMPLIFIER TRANSISTOR
PNP SILICON
Refer to 2N2904 for graphs.
Symbol Min
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V(BR)CE0
ICBO
60
lEBO
Max
75
1
100
10
Unit
nA
HA
nA
uA
VcE(sat)
VBE(sat)
hFE
50
40
40
50
100
Cob
0.9
1.3
200
MHz
pF
4-257
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页数 | 1 页 | ||
下载 | [ CV9790.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
CV9790 | Bipolar PNP Device | Seme LAB |
CV9790 | AMPLIFIER TRANSISTOR | Motorola Semiconductors |
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CV9790LL | Bipolar PNP Device | Seme LAB |
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