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PDF ( 数据手册 , 数据表 ) J110

零件编号 J110
描述 JFET GENERAL-PURPOSE TRANSISTOR
制造商 Motorola Semiconductors
LOGO Motorola Semiconductors LOGO 


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J110 数据手册, 描述, 功能
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
Total Device Dissipation (a T/\ = 25°C
Derate above 25°C
Junction Temperature Range
Storage Channel Temperature Range
Symbol
VDG
VGS
"G
PD
Tj
Tstg
Value
-25
-25
10
310
2.82
135
-65 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
J107, J108
J109, J110
CASE 29-02, STYLE 5
TO-92 (TO-226AA)
JFET
GENERAL-PURPOSE
TRANSISTOR
N-CHANNEL DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(VDS = 0, Iq = -10 MAdc)
Gate Reverse Current
(VG S = -15 Vdc, VDS = 0)
(Vqs = -15 Vdc, VDs = 0, TA = 100°C)
Gate Source Cutoff Voltage
(Vds = 15 Vdc, Iq = 10 nAdc)
ON CHARACTERISTICS
J 107
J108
J109
J110
Zero-Gate-Voltage Drain Current(1)
(vD s = 15, vG s = o)
J107
J108
J109
J110
Drain-Source On-Resistance
(v Ds < 0.1 v, v GS = o v)
SMALL-SIGNAL CHARACTERISTICS
J107
J108
J109
J110
Drain Gate + Source Gate On-Capacitance
(Vds = o vdc, v G s = o, f = 1.0 mhz)
Drain Gate Off-Capacitance
(Vds = o vdc, v G s = - 10 v, f = i.o MHz)
Sou'ce Gate Off-Capacitance
(Vds = o vdc, vgs = -10 v, f = 1.0 mhz)
(1) Pulse Duration 300 jis. Duty Cycle s 2.0%.
Symbol
Min
V (BR)GSS
'GSS
-25
-
v GS(off)
-0.5
-3.0
-2.0
-0.5
!DSS
r DS(on)
c dg(on)
+
c sg(on)
c dg(off)
c sg(off)
100
80
40
10
-
Typ Max Unit
- - Vdc
- -3.0
nAdc
-200
Vdc
-4.5
-10
- -6.0
-4.0
mAdc
'
ohms
8.0
8.0
_ 12
18
85 PF
.
15
15
PF
PF
6-105












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