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PDF ( 数据手册 , 数据表 ) P600G

零件编号 P600G
描述 SILICON RECTIFIER DIODES
制造商 EIC
LOGO EIC LOGO 


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P600G 数据手册, 描述, 功能
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
P600A - P600M
SILICON RECTIFIER DIODES
PRV : 50 - 1000 Volts
D6
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Void-free molded plastic body
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 2.1 grams
0.360 (9.1)
0.340 (8.6)
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 60 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed on
rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at IF = 6 A
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical junction capacitance at 4.0V, 1MHz
Typical Thermal Resistance (1)
Typical reverse recovery time (2)
Junction Temperature Range
Storage Temperature Range
SYMBOL P600A P600B P600D P600G P600J P600K P600M UNIT
VRRM
VRMS
VDC
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
IF(AV)
6.0 A
IFSM
VF
IR
IR(H)
CJ
RθJA
Trr
TJ
TSTG
400
1.0
5.0
1.0
150
20
2.5
- 50 to + 150
- 50 to + 150
A
V
μA
mA
pF
°C/W
μs
°C
°C
Notes :
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,
P.C.B. mounted with 1.1” x 1.1” (30 x 30mm) copper pads
(2) Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
Page 1 of 2
Rev. 05 : September 16, 2008












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