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零件编号 | BCW31 | ||
描述 | GENERAL PURPOSE TRANSISTOR | ||
制造商 | Motorola Semiconductors | ||
LOGO | |||
1 Page
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
VCEO
VCBO
Vebo
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, Ta = 25°C
Derate above 25°C
PD
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
R 8JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
20
30
5.0
100
Max
350
2.8
150
357
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
rnWTC
°C
°C/W
BCW31,32,33
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 2.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
c(l = 10 /iAdc, Ib = 0)
Emitter-Base Breakdown Voltage
E(l = 10 ^Adc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, Vce = 5.0 Vdc)
BCW31
BCW32
BCW33
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 0-5 mAdc)
Base-Emitter On Voltage
c(l = 2.0 mAdc, Vqe = 5.0 vdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(IE = 0- Vcb = 10 Vdc, f = 1.0 MHz)
Noise Figure
c(l = 0.2 mAdc, VC E = 5.0 Vdc, Rs = 2.0 kn,
BWf = 1.0 kHz,
= 200 Hz)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
Min
20
30
5.0
Max
Vdc
"FE
VCE(sat)
v BE(on)
110
200
420
0.55
C bo
220
450
800
0.25
Vdc
Vdc
PF
dB
3-9
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页数 | 1 页 | ||
下载 | [ BCW31.PDF 数据手册 ] |
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