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PDF ( 数据手册 , 数据表 ) LC05732ARA

零件编号 LC05732ARA
描述 Battery Protection IC
制造商 ON Semiconductor
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LC05732ARA 数据手册, 描述, 功能
LC05732ARA
Battery Protection IC,
Integrated Power MOSFET,
1-Cell Lithium-Ion Battery
Overview
The LC05732ARA is a protection IC for 1-cell lithium-ion secondary batteries
with integrated power MOS FET. Also it integrates highly accurate detection
circuits and detection delay circuits to prevent batteries from over-charging,
over-discharging, over-current discharging and over-current charging.
In addition, main system can execute the power-on reset of itself by turning off
the charge FET and discharge FET of LC05732ARA for a certain time period,
with a reset signal.
A battery protection system can be made by only LC05732ARA and few
external parts.
Features
Charge-and-discharge power MOSFET are integrated at Ta = 25°C,
VCC = 4.0V
ON resistance (total of charge and discharge ) 4.8m(typ)
Highly accurate detection voltage/current at Ta = 25°C, VCC = 3.7V
Over-charge detection
±25mV
Over-discharge detection
±50mV
Charge over-current detection
±0.7A
Discharge over-current detection ±0.7A
Delay time for detection and release (fixed internally)
Discharge/Charge over-current detection is compensated for temperature
dependency of power FET
0V battery charging
: “Inhibit”
Auto wake-up function battery charging
: “Inhibit”
Forcible charge-FET and discharge-FET OFF mode
RSTB>VDD*0.9: Charge-FET and Discharge-FET=ON
RSTB<VDD*0.1: Charge-FET and Discharge-FET=OFF
Typical Applications
Smart phone
Tablet
Wearable device
www.onsemi.com
ECP30 (1.97×4.01, 0.4Pitch)
GENERIC
MARKING DIAGRAM
XXXXX
AYYWW
A = Assembly Location
YY = Year
WW = Work Week
© Semiconductor Components Industries, LLC, 2017
February 2017 - Rev. 0
1
Publication Order Number:
LC05732ARA/D







LC05732ARA pdf, 数据表
LC05732ARA
Description of operation
(1)Normal mode
LC05732ARA controls charging and discharging
by detecting cell voltage (VCC) and controls
S2-S1 current. In case that cell voltage is between
over-discharge detection voltage (Vuv) and
over-charge detection voltage (Vov), and S2-S1
current is between charge over-current detection
current (Ioch) and discharge over-current
detection current (Ioc), internal power MOS FETs
as CHG_SW, DCHG_SW are both turned ON.
This is the normal mode, and it is possible to be
charged and discharged.
(2)Over-charging mode
Internal poer MOS FETCHG_SW turns off if cell
voltage becomes greater than or equal to
over-charge detection voltage (Vov) over the delay
time of over-charging (Tov).
This is the over-charging detection mode.
The recovery from over-charging will be made
after the following two conditions are satisfied.
1. Charger is removed from IC.
2. Cell voltage decreases under over-charge
release voltage (Vovr) over the delay time of
over-charging releasing (Tovr) due to
discharging through a load.
Consequently, internal power MOS FET as
CHG_SW will be turned on and normal mode will
be resumed.
In over-charging mode, discharging over-current
detection is made only when CS pin increases
more than discharging over-current detection
current 2(Ioc2), because discharge current flows
through parasitic diode of CHG_SW FET.
If CS pin voltage increases more than discharging
over-current detection current 2 (Ioc2) over the
delay time of discharging over-current 2 (Toc2),
discharging will be shut off, because internal
power FETs as DCHG_SW is turned off.
(short-circuit detection mode)
After detecting short-circuit, CS pin will be pulled
down to Vss by internal resistor Rcsd.
The recovery from short circuit detection in
over-charging mode will be made after the
following two conditions are satisfied.
1. Load is removed from IC.
2. CS pin voltage becomes less than or equal to
discharging over-current detection current 2
(Ioc2) due to CS pin pulled down through
Rcsd.
Consequently, internal power MOS FET as
DCHG_SW will be turned on, and over-charging
detection mode will be resumed.
(3)Over-discharging mode without Auto Wake
Up function
If cell voltage drops lower than over-discharge
detection voltage (Vuv) over the delay time of
over-discharging (Tuv), discharging will be shut
off, internal power FETs as DCHG_SW is turned
off.
This is the over-discharging mode.
After detecting over-discharging, CS pin will be
pulled up to Vcc by an internal resistor Rcsu and
the bias of internal circuits will be shut off.
(Shut-down mode)
In shut-down mode, operating current is
suppressed under 0.1uA (max).
The recovery from stand-by mode will be made by
internal circuits biased after the connecting
charger.
By continuing to be charged, if cell voltage
increases more than over-discharge detection
voltage (Vuvr) over the delay time of
over-discharging (Tuvr), internal power MOS
FETs as DCHG_SW is turned on and normal
mode will be resumed.
In over-discharge detection mode, charging
over-current detection does not operate.
By continuing to be charged, charging
over-current detection starts to operate after cell
voltage goes up more than over-discharge release
voltage (Vuvr).
(4)Discharging over-current detection mode 1
Internal power MOS FET as DCHG_SW will be
turned off and discharging current will be shut off
if CS pin voltage becomes greater than or equal to
discharging over-current detection current (Ioc)
over the delay time of discharging over-current
(Toc1).
This is the discharging over-current detection
mode 1.
In discharging over-current detection mode 1, CS
pin will be pulled down to Vss with internal
resistor Rcsd.
The recovery from discharging over-current
detection mode will be made after the following
two conditions are satisfied.
1. Load is removed from IC.
2. CS pin voltage becomes less than or equal to
discharging over-current release current (Iocr)
over the delay time of discharging over-current
release (Tocr1) due to CS pin pulled down
through Rcsd.
Consequently, internal power MOS FET as
DCHG_SW will be turned on, and normal mode
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