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PDF ( 数据手册 , 数据表 ) MV209

零件编号 MV209
描述 Silicon Epicap Diodes
制造商 Motorola Semiconductors
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MV209 数据手册, 描述, 功能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Epicap Diodes
Designed for general frequency control and tuning applications; providing
solid–state reliability in replacement of mechnaical tuning methods.
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
31
Cathode
Anode
SC–70/SOT–323
31
Cathode
Anode
SOT–23
21
Cathode
Anode
TO–92
MAXIMUM RATINGS
Rating
Symbol MBV109T1 MMBV109LT1 MV209 Unit
Reverse Voltage
Forward Current
VR
IF
30 Vdc
200 mAdc
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
280
2.8
200 200 mW
2.0 1.6 mW/°C
Junction Temperature
Storage Temperature Range
TJ
Tstg
+125
–55 to +150
°C
°C
DEVICE MARKING
MBV109T1 = J4A, MMBV109LT1 = M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Reverse Breakdown Voltage (IR = 10 µAdc)
Reverse Voltage Leakage Current (VR = 25 Vdc)
Diode Capacitance Temperature Coefficient
(VR = 3.0 Vdc, f = 1.0 MHz)
V(BR)R
IR
TCC
Min
30
MMMBBVV110099TL1T1*
MV209*
* Motorola Preferred Devices
26–32 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 419–02, STYLE 3
SC–70/SOT–323
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
1
2
CASE 182–02, STYLE 1
TO–92 (TO–226AC)
Typ Max Unit
— — Vdc
— 0.1 µAdc
300 — ppm/°C
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz (Note 1)
Device
Min Nom Max
Min
Min Max
MBV109T1, MMBV109LT1, MV209
26
29
32
200
5.0 6.5
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc.
MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMBV109LT1/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–91












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