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PDF ( 数据手册 , 数据表 ) U309

零件编号 U309
描述 JFET VHF/UHF AMPLIFIER
制造商 Motorola Semiconductors
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U309 数据手册, 描述, 功能
U308
U309
U310
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Gate-Source Voltage
Gate Current
Total Device Dissipation (& T/\ = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VDS
vgs
•q
Pd
TJ. Tstg
Value
25
25
20
500
4.0
- 65 to + 1 50
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.;
OFF CHARACTERISTICS
Characteristic
Gate-Source Breakdown Voltage
G(l = 1.0 nA, V DS = 0)
Gate Reverse Current
(Vqs = -15 V)
(vGs = o,ta = i25°o
Gate Source Cutoff Voltage
(VDS = 10 V, Dl = 1.0 nA)
ON CHARACTERISTICS
U308
U309
U310
Zero-Gate-Voltage Drain CurrentO)
(Vds = 10 V, Vqs = 0)
U308
U309
U310
Gate-Source Forward Voltage
(Iq = 10 mA, V DS = 0)
SWITCHING CHARACTERISTICS
Common-Gate Forward TransconductanceO)
(Vds = V, Id = 10 mA, f = 1.0 kHz)
U308
U309
U310
Common-Gate Output Conductance
(Vds = 10 V, Dl = 10 mA, f = 1.0 kHz)
Drain-Gate Capacitance
(Vgs = -iov, vDS = iov, f = lomhz)
Gate-Source Capacitance
(Vgs = -io v, v Ds = 10 v, f = 1.0 mhz)
Equivalent Short-Circuit Input Noise Voltage
(Vds
=
10
v
-
'D
=
10 mA, f
=
100 Hz)
(1) Pulse test duration = 2.0 ms.
(2) See Figures 10 and 11 for Noise Figure and Power Gain information.
Symbol
V(BR)GSS
!GSS
VGS(off)
toss
v GS(f)
flfg
9og
Cgd
Cg S
en
CASE 27-02, STYLE 4
TO-52 (TO-206AC)
JFET
VHF/UHF AMPLIFIER
N-CHANNEL DEPLETION
Min
Typ
Max
Unit
-25 - - V
-
- -150
PA
-150
nA
-1.0
-1.0
-2.5
-
-6.0
-4.0
-6.0
V
mA
12 60
12 30
24 60
_ 1.0 V
- mmhos
10 20
10 20
10 18
150 jimhos
— — 2.5 pF
— — 5.0 PF
10 nVVfiz
6-1 89












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