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PDF ( 数据手册 , 数据表 ) QM08N60F

零件编号 QM08N60F
描述 MOSFETs
制造商 UBIQ
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QM08N60F 数据手册, 描述, 功能
QM08N60F
機密
1
2011-11-15 - 1 -
N-Ch 600V Fast Switching MOSFETs
General Description
The QM08N60F is the highest performance N-ch
MOSFETs with extreme high cell density , which
provide excellent RDSON and gate charge for
most of the synchronous buck converter
applications .
The QM08N60F meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
600V
RDSON
1.0
ID
8A
Applications
z High efficient switched mode power supplies
z Electronic lamp ballast
z LCD TV/ Monitor
z Adapter
TO220F Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current6
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
G DS
Rating
600
±30
8
5
16
14.5
5.2
30
-55 to 150
-55 to 150
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
4.2
Units
V
V
A
A
A
mJ
A
W
Unit
/W
/W
Rev A.01 D110311
1












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