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PDF ( 数据手册 , 数据表 ) BAS21HT3G

零件编号 BAS21HT3G
描述 High Voltage Switching Diode
制造商 ON Semiconductor
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BAS21HT3G 数据手册, 描述, 功能
BAS21HT1G, BAS21HT3G,
NSVBAS21HT1G,
NSVBAS21HT3G
High Voltage
Switching Diode
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Surge
Current, 60 Hz
VR
VRRM
IF
IFRM
IFSM(surge)
250
250
200
500
625
Vdc
Vdc
mAdc
mA
mAdc
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
IFSM
A
t = 1 ms
20
t = 10 ms
20
t = 100 ms
10
t = 1 ms
4
t=1s
1
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
200 mW
1.57 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
635 °C/W
Junction and Storage Temperature
Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 Minimum Pad
www.onsemi.com
HIGH VOLTAGE
SWITCHING DIODE
1
CATHODE
2
ANODE
MARKING
2 DIAGRAM
1 SOD−323
CASE 477
STYLE 1
JS M G
G
JS = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BAS21HT1G,
SOD−323 3000 / Tape & Reel
NSVBAS21HT1G (Pb−Free)
BAS21HT3G,
SOD−323 10000 / Tape &
NSVBAS21HT3G (Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 11
1
Publication Order Number:
BAS21HT1/D












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