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PDF ( 数据手册 , 数据表 ) MT9HVF12872PK

零件编号 MT9HVF12872PK
描述 1GB DDR2 SDRAM VLP Mini-RDIMM
制造商 Micron
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MT9HVF12872PK 数据手册, 描述, 功能
512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
Features
DDR2 SDRAM VLP Mini-RDIMM
MT9HVF6472(P)K – 512MB
MT9HVF12872(P)K – 1GB
For component data sheets, refer to Micron’s Web site: www.micron.com
Features
• 244-pin, very low profile mini registered dual in-line
memory module (VLP Mini-RDIMM)
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 512MB (64 Meg x 72) or 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• VDD = VDDQ = +1.8V
• VDDSPD = +1.7V to +3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
operation
• Supports duplicate output strobe (RDQS/RDQS#)
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
Figure 1: 244-Pin VLP Mini-RDIMM
PCB height: 18.2mm (0.72in)
Options
• Parity
• Operating temperature1
Commercial (0°C TA +70°C)
Industrial (–40°C TA +85°C)
• Package
244-pin DIMM (Pb-free)
• Frequency/CAS latency2
2.5ns @ CL = 5 (DDR2-800)
2.5ns @ CL = 6 (DDR2-800)
3ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-533)
5.0ns @ CL = 3 (DDR2-400)
• PCB height
18.2mm (0.72in)
Marking
P
None
I
Y
-80E
-800
-667
-53E
-40E
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
Table 1:
Speed
Grade
-80E
-800
-667
-53E
-40E
Key Timing Parameters
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 6
800
Data Rate (MT/s)
CL = 5
800
667
667
CL = 4
533
53E
533
533
400
CL = 3
400
400
400
tRCD
(ns)
12.5
15
15
15
15
tRP
(ns)
tRC
(ns)
12.5 55
15 55
15 55
15 55
15 55
PDF: 09005aef81c9620b/Source: 09005aef81c961ec
HVF9C64_128x72K.fm - Rev. C 3/07 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.







MT9HVF12872PK pdf, 数据表
512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
Electrical Specifications
Electrical Specifications
Stresses greater than those listed in Table 7 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions above those indicated in each device’s data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Table 7: Absolute Maximum Ratings
Symbol
VDD/VDDQ
VIN, VOUT
II
IOZ
IVREF
TA
TC1
Parameter
VDD/VDDQ supply voltage relative to VSS
Voltage on any pin relative to VSS
Input leakage current; Any input 0V VIN VDD;
VREF input 0V VIN 0.95V (All other pins not under
test = 0V)
Output leakage current; 0V VOUT VDDQ; DQs and
ODT are disabled
VREF leakage current; VREF = valid VREF level
Module ambient operating temperature
DDR2 SDRAM component case operating
temperature2
Command/address
RAS#, CAS#, WE#, S#,
CKE, ODT, BA
CK, CK#
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
Min
–0.5
–0.5
–5
–250
–5
–5
–18
0
–40
0
–40
Max
+2.3
+2.3
+5
Units
V
V
µA
+250
+5
+5
+18
+70
+85
+85
+95
µA
µA
°C
°C
°C
°C
Notes:
1. Refresh rate is required to double when 85°C < TC 95°C.
2. For further information, refer to technical note TN-00-08: Thermal Applications, available
on Micron’s Web site.
Input Capacitance
Micron encourages designers to simulate the performance of the module to achieve
optimum values. Simulations are significantly more accurate and realistic than a gross
estimation of module capacitance when inductance and delay parameters associated
with trace lengths are used in simulations. JEDEC modules are currently designed using
simulations to close timing budgets.
Component AC Operating Specifications
Recommended AC operating conditions are given in the DDR2 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades
correlate with component speed grades as shown in Table 8.
Table 8:
Module and Component Speed Grades
Module Speed Grade
-80E
-800
-667
-53E
-40E
Component Speed Grade
-25E
-25
-3
-37E
-5E
PDF: 09005aef81c9620b/Source: 09005aef81c961ec
HVF9C64_128x72K.fm - Rev. C 3/07 EN
8 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.







MT9HVF12872PK equivalent, schematic
512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
Register and PLL Specifications
Table 16: Serial Presence-Detect Matrix (continued)
Byte Description
Entry (Version)
512MB
1GB
63 Checksum for bytes 0–62
ECC/ECC and parity
64
65–71
72
73–90
91
92
93
94
95–98
99–127
128–255
Manufacturer’s JEDEC ID code
Manufacturer’s JEDEC ID code
Manufacturing location
Module part number (ASCII)
PCB identification code
Identification code (continued)
Year of manufacture in BCD
Week of manufacture in BCD
Module serial number
Reserved for manufacturer-specific data
Reserved for customer-specific data
-80E
-800
-667
-53E
-40E
MICRON
(continued)
1–12
1–9
0
62/66
03/07
1E/22
C9/CD
30/34
2C
FF
01–0C
Variable data
01–09
00
Variable data
Variable data
Variable data
00
FF
03/07
A4/A8
BF/C3
6A/6E
D1/D5
2C
FF
01–0C
Variable data
01–09
00
Variable data
Variable data
Variable data
00
FF
Notes: 1. The tRC SPD values shown are JEDEC DDR2 device specification values. The actual Micron
DDR2 device specification is tRC = 55ns for all speed grades.
PDF: 09005aef81c9620b/Source: 09005aef81c961ec
HVF9C64_128x72K.fm - Rev. C 3/07 EN
16
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.










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