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PDF ( 数据手册 , 数据表 ) MT16HTF25664HY

零件编号 MT16HTF25664HY
描述 2GB DDR2 SDRAM SODIMM
制造商 Micron
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MT16HTF25664HY 数据手册, 描述, 功能
1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
Features
DDR2 SDRAM SODIMM
MT16HTF12864HY – 1GB
MT16HTF25664HY – 2GB
Features
200-pin, small-outline dual in-line memory module
(SODIMM)
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
1GB (128 Meg x 64) or 2GB (256 Meg x 64)
VDD = VDDQ 1.8V
VDDSPD = 1.7–3.6V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Multiple internal device banks for concurrent opera-
tion
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1 tCK
Programmable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Serial presence detect (SPD) with EEPROM
Gold edge contacts
Dual rank
Figure 1: 200-Pin SODIMM (MO-224 R/C E)
Module height: 30mm (1.18in)
Options
Operating temperature
Commercial (0°C TA +70°C)
Industrial (–40°C TA +85°C)1
Package
200-pin DIMM (lead-free)
Frequency/CL2
2.5ns @ CL = 5 (DDR2-800)
2.5ns @ CL = 6 (DDR2-800)
3ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-533)
5.0ns @ CL = 3 (DDR2-400)3
Marking
None
I
Y
-80E
-800
-667
-53E
-40E
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 6
800
800
Data Rate (MT/s)
CL = 5
CL = 4
800 533
667 533
667 553
553
400
CL = 3
400
400
400
400
400
tRCD
(ns)
12.5
15
15
15
15
tRP
(ns)
12.5
15
15
15
15
tRC
(ns)
55
55
55
55
55
PDF: 09005aef818e4054
htf16c128_256x64h.pdf - Rev. D 3/10 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.







MT16HTF25664HY pdf, 数据表
1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
Electrical Specifications
Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in the device data sheet are not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
Table 7: Absolute Maximum Ratings
Symbol
VDD
VIN, VOUT
II
IOZ
IVREF
TA
TC1
Parameter
VDD supply voltage relative to VSS
Voltage on any pin relative to VSS
Input leakage current; Any input 0V VIN Address inputs, RAS#, CAS#,
VDD; VREF input 0V VIN 0.95V; (All other WE#
pins not under test = 0V)
S#, CKE, ODT, CK, CK#
DM
Output leakage current; 0V VOUT; DQ and DQ, DQS, DQS#
ODT are disabled
VREF leakage current; VREF = valid VREF level
Module ambient operating temperature Commercial
Industrial
DDR2 SDRAM component operating tem- Commercial
perature2
Industrial
Min
–1.0
–0.5
–80
–40
–10
–10
–32
0
–40
0
–40
Max
2.3
2.3
80
40
10
10
32
70
85
85
95
Units
V
V
µA
µA
µA
°C
°C
°C
°C
Notes:
1. The refresh rate is required to double when TC exceeds 85°C.
2. For further information, refer to technical note TN-00-08: "Thermal Applications," avail-
able on Micron’s Web site.
PDF: 09005aef818e4054
htf16c128_256x64h.pdf - Rev. D 3/10 EN
8 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.














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