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零件编号 | WNM2046B | ||
描述 | MOSFET ( Transistor ) | ||
制造商 | WillSEMI | ||
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1 Page
WNM2046B
Single N-Channel, 20V, 0.71A, Power MOSFET
VDS (V)
20
Typical Rds(on) (Ω)
0.220@ VGS=4.5V
0.260@ VGS=2.5V
0.315@ VGS=1.8V
WNM2046B
Http://www.sh-willsemi.com
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S
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Descriptions
DFN1006-3L
The WNM2046B is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNM2046B is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN1006-3L
Applications
D
GS
Pin configuration (Top view)
6 = Device Code
* = Month (A~Z)
Marking
Small Signal Switching
Small Moto Driver
Order information
Device
WNM2046B-3/TR
Package
DFN1006-3L
Shipping
10K/Reel&Tape
Will Semiconductor Ltd.
1
Aug, 2014- Rev.1.0
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页数 | 7 页 | ||
下载 | [ WNM2046B.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
WNM2046 | N-Channel MOSFET | Will Semiconductor |
WNM2046B | MOSFET ( Transistor ) | WillSEMI |
WNM2046C | MOSFET ( Transistor ) | WillSEMI |
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