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零件编号 | WCM2064 | ||
描述 | MOSFET ( Transistor ) | ||
制造商 | WillSEMI | ||
LOGO | |||
1 Page
WCM2064
N- and P-Channel Complementary, 20V,MOSFET
VDS (V)
N-Channel
20
P-Channel
-20
Typical RDS(on) (Ω)
0.034@ VGS=4.5V
0.041@ VGS=2.5V
0.050@ VGS=1.8V
0.083@VGS=- 4.5V
0.110@VGS= -2.5V
0.145@VGS= -1.8V
Descriptions
The WCM2064 is the N-Channel and
P-Channel enhancement MOS Field Effect
Transistor as a single package for DC-DC converter
or level shift applications, uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. Standard Product WCM2064
is Pb-free a nd Halogen-free.
WCM2064
Http//:www.sh-willsemi.com
SOT-23-6L
Pin configuration (Top View)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23-6L
Applications
Driver: Relays, Solenoids, Lamps, Hammers
Power supply converters circuit
Load/Power Switching for portable device
2064 = Device Code
YYWW= Date Code
Marking
Order Information
Device
Package
Shipping
WCM2064-6/TR SOT-23-6L 3000/Tape&Reel
Will Semiconductor Ltd.
1 May, 2014 -Rev.1.1
WCM2064
800 10
700 T=25C
T=125C
600 Ciss 8
500 6
400
300 4
200
100
0
0
Crss
Coss
2468
-V -Drain to Source Voltage(V)
DS
10
2
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD- Source to Drain Voltage (V)
Capacitor
50
45
40
35
30
25
20
15
10
5
0
1E-4 1E-3 0.01 0.1 1
T =150°C
J(Max)
TA=25°C
10 100 1000
Pulse width (S)
Single pulse power (Junction-to-ambient)
Body diode forward voltage
100
10 Limit by Rdson*
100us
1
10S
1ms
10ms
100ms
0.1
TA=25C
Single Pulse
DC 1S
Bvdss Limit
0.01
0.1
1 10
-VDS- Drain Source Voltage (V)
100
* VGS> minimum VGS at which RDS(on) is specified
Safe operating power
5
ID=-2.8A
4
VDD=-6V
VDD=-8V
VDD=-10V
3
2
1
0
0246
Qg(nC)
Gate charge Characteristics
Will Semiconductor Ltd.
9 May, 2014 -Rev.1.1
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页数 | 10 页 | ||
下载 | [ WCM2064.PDF 数据手册 ] |
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