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零件编号 | WNM6002 | ||
描述 | MOSFET ( Transistor ) | ||
制造商 | WillSEMI | ||
LOGO | |||
1 Page
WNM6002
Single N-Channel, 60V, 0.30A, Power MOSFET
VDS (V)
Rds(on) (Ω)
1.4@ VGS=10V
60
1.7@ VGS=4.5V
ESD Rating:2000V HBM
Descriptions
The WNM6002 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM6002 is Pb-free and
Halogen-free.
WNM6002
Http//:www.sh-willsemi.com
SOT-323
D
3
12
GS
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-323
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Pin configuration (Top view)
3
62*
1
2
62 = Device Code
* = Month (A~Z)
Marking
Order information
Device
Package
Shipping
WNM6002-3/TR SOT-323 3000/Reel&Tape
Will Semiconductor Ltd. 1 Sep, 2013 - Rev.1.0
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页数 | 7 页 | ||
下载 | [ WNM6002.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
WNM6001 | N-Channel MOSFET | Will Semiconductor |
WNM6002 | MOSFET ( Transistor ) | WillSEMI |
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