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零件编号 | WNM3025 | ||
描述 | MOSFET ( Transistor ) | ||
制造商 | WillSEMI | ||
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1 Page
WNM3025
Single N-Channel, 30V, 0.23A, Power MOSFET
VDS (V)
30
Typical RDS(on) (Ω)
1.2 @VGS=10V
1.4 @VGS=4.5V
WNM3025
Http://www.sh-willsemi.com
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Descriptions
The WNM3025 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM3025 is Pb-free.
DFN1006-3L
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Features
GS
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package DFN1006-3L
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
Pin configuration (Top view)
J = Device Code
* = Month(A~z)
Marking
Order information
Device
Package
Shipping
WNM3025-3/TR DFN1006-3L 10K/Tape&Reel
Will Semiconductor Ltd. 1 2016/10/21- Rev.1.0
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页数 | 7 页 | ||
下载 | [ WNM3025.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
WNM3025 | MOSFET ( Transistor ) | WillSEMI |
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