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零件编号 | WNMD2179 | ||
描述 | Dual N-Channel MOSFET | ||
制造商 | Will Semiconductor | ||
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WNMD2179
WNMD2179
Dual N-Channel, 20V, 6.3A, Power MOSFET
www.sh-willsemi.com
VDS (V)
Rds(on) (ȍ)
0.0175@ VGS=4.5V
0.0195@ VGS=3.1V
20
0.0215@ VGS=2.5V
ESD Rating: 2000V HBM
Descriptions
The WNMD2179 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2179 is Pb-free.
Features
TSOT-23-6L
G1 D1/D2 G2
654
1 23
S1 D1/D2 S2
Pin configuration (Top view)
6 54
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package TSOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
2179
NDYW
123
2179
ND
Y
W
= Device Code
= Special Code
= Year
=Week(A~z)
Marking
Order information
Device
WNMD2179-6/TR
Package
Shipping
TSOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Oct, 2014 - Rev.1.0
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页数 | 7 页 | ||
下载 | [ WNMD2179.PDF 数据手册 ] |
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