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零件编号 | WNMD2157 | ||
描述 | Dual N-Channel MOSFET | ||
制造商 | Will Semiconductor | ||
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1 Page
WNMD2157
Dual N-Channel, 20V, 5.4A, Power MOSFET
VDS (V)
20
Rds(on) (ȍ)
0.019@ VGS=4.5V
0.024@ VGS=2.5V
0.034@ VGS=1.8V
WNMD2157
Http//:www.willsemi.com
Descriptions
Package
The WNMD2157 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2157 is Pb-free and
Halogen-free.
Features
G1 D1/D2
65
G2
4
1 23
S1 D1/D2 S2
Pin configuration (Top view)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-6L
Applications
6 54
2157
YYWW
1 23
2157
YY
WW
= Device Code
= Year
= Week
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
Marking
Order information
z Power Switch
z Load Switch
Device
Package
Shipping
WNMD2157-6/TR SOT-23-6L 3000/Reel&Tape
z Charging
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.3
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页数 | 6 页 | ||
下载 | [ WNMD2157.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
WNMD2153 | Dual N-Channel MOSFET | Will Semiconductor |
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WNMD2156 | Dual N-Channel MOSFET | Will Semiconductor |
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