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PDF ( 数据手册 , 数据表 ) GA08JT17-247

零件编号 GA08JT17-247
描述 Junction Transistor
制造商 GeneSiC
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GA08JT17-247 数据手册, 描述, 功能
GA08JT17-247
Normally OFF Silicon Carbide
Junction Transistor
Features
175 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Package
RoHS Compliant
D
VDS
RDS(ON)
ID @ Tc=125°C
hFE Tc=25°C
=
=
=
=
1700 V
230 m
8A
60
D
S
D
G
TO-247AB
G
S
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Absolute Maximum Ratings
Parameter
Drain Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate Source Voltage
Reverse Drain Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
IGM
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Conditions
VGS = 0 V
TC = 125 °C
TVJ = 175 oC, IG = 1 A,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 1200 V,
Non Repetitive
TC = 125 °C
Value
1700
8
1.5
ID,max = 8
@ VDS ≤ VDSmax
20
30
50
48
-55 to 175
Unit
V
A
A
A
Notes
Fig. 6
Fig. 19
Fig. 16
µs
V
V
W Fig. 14
°C
Electrical Characteristics
Parameter
On State Characteristics
Drain Source On Resistance
Gate Forward Voltage
DC Current Gain
Off State Characteristics
Drain Leakage Current
Gate Leakage Current
Symbol
Conditions
Min.
Value
Typical
Max. Unit
Notes
RDS(ON)
VGS(FWD)
hFE
ID = 8 A, Tj = 25 °C
ID = 8 A, Tj = 125 °C
ID = 8 A, Tj = 175 °C
IG = 500 mA, Tj = 25 °C
IG = 500 mA, Tj = 175 °C
VDS = 5 V, ID = 8 A, Tj = 25 °C
VDS = 5 V, ID = 8 A, Tj = 175 °C
230
410 Fig. 5
560
3.0
2.8
V Fig. 4
60
40
Fig. 5
IDSS
ISG
VR = 1700 V, VGS = 0 V, Tj = 25 °C
VR = 1700 V, VGS = 0 V, Tj = 125 °C
VR = 1700 V, VGS = 0 V, Tj = 175 °C
VSG = 20 V, Tj = 25 °C
0.2 10
0.5
50 μA
Fig. 6
2.0 100
20 nA
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 1 of 10







GA08JT17-247 pdf, 数据表
GA08JT17-247
Table 2: IX2204 Gate Drive Example Component List
Symbol
Parameter
Values
Range
Typical
VGH Supply Voltage, Driver Output A 15 20
+ 20.0
VGL Supply Voltage, Driver Output B 5.0 7.0
+ 5.0
VEE Negative Supply Voltage
-10 GND - 5.0
Gate Capacitor CG Selection
VGH / VEE
VGL / VEE
RCG CG
Rch
IG G
RG(INT)
D
S
DRG RG(EXT)
Figure 23: Primary gate drive circuit passive components with series gate resistance Schottky rectifier.
An external gate capacitor CG connected directly to the device gate pin delivers the positive current peak IG,on during device turn-on and the
negative current peak IG,off during turn-off. A low value resistor RCG is connected in series with CG to damp potential high-frequency oscillation.
A high value resistor Rch in parallel with CG sets the SJT gate to a defined potential (-VEE) during steady off-state.
At device turn-on, CG is pulled to VGH which produces a transient peak of gate voltage and current. This current peak rapidly charges the
internal SJT CGS and CGD capacitances. A Schottky diode, DRG, in series with RG(EXT) blocks any CG induced current from draining out through
RG(EXT) and ensures that all of the charge within CG flows only into the device gate, allowing for an ultra-fast device turn-on. During steady on-
state, a potential of VGH - VGS = VGH 3 V is across CG. When the device is turned off, CG is pulled to negative VEE and VGS is pulled to a
transient peak of VGS,turn-off = VEE (VGH 3 V), this induces the negative current peak IG,off out of the gate which discharges the SJT internal
capacitances.
External Gate Resistor RG(EXT) Selection
An external gate resistor RG(EXT) connected directly to the SJT gate pin acts to deliver a continuous current IG,steady during steady on-state. The
gate current is determined by:
The on-state gate-source voltage VGS(FWD) can be approximated to 3 V and the Schottky on-state voltage VSch can be approximated to 0.3 V
which simplifies the equation to:
The desired IG,steady is determined by the peak device junction temperature TJ during operation, drain current ID, DC current gain β, and a 50 %
safety margin to avoid operating the device in saturation. IG,steady may also be approximated from the temperature dependent on-state curves of
the device in Figures Error! Reference source not found. Error! Reference source not found., provided that a 50 % increase is given.
Symbol
CG
RCG
Rch
RG(EXT)
RG(INT-ON)
DRG
Table 3: Passive Output Component List
Parameter
Gate Capacitor, External
Damping Resistor of Gate Capacitor
Charging Resistor
Gate Resistor, External
Gate Resistance, Internal, On-State
Range
5 20
0.5 2.0
500 10k
0.4 5
0.5 1.5
Values
Typical
10
1.0
1k
2
0.9
Schottky Diode of Gate Resistor -- --
Units
nF
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 8 of 10














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