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PDF ( 数据手册 , 数据表 ) TSA24N50MR

零件编号 TSA24N50MR
描述 N-Channel MOSFET
制造商 Truesemi
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TSA24N50MR 数据手册, 描述, 功能
TSA24N50MR
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 24A,500V,Max.RDS(on)=0.2 Ω @ VGS =10V
• Low gate charge(typical 90nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TJ=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TC = 25
TC = 100
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
500
±30
24
15
96
1150
24
29
4.5
PD
Power Dissipation (TC = 25)
-Derate above 25
290
2.33
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink Typ.
Thermal Resistance,Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.43
--
40
Units
V
V
A
A
A
mJ
A
mJ
V/ns
W
W/
Units
/W
/W
/W
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com












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