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零件编号 | RU1HC2H | ||
描述 | N-Channel Advanced Power MOSFET | ||
制造商 | Ruichips | ||
LOGO | |||
1 Page
RU1HC2H
Complementary Advanced Power MOSFET
MOSFET
Features
• N-Channel
100V/3.5A,
RDS (ON) =75mΩ (Typ.) @ VGS=10V
RDS (ON) =80mΩ (Typ.) @ VGS=4.5V
• P-Channel
-100V/-2.5A,
RDS (ON) =155mΩ (Typ.) @ VGS=-10V
RDS (ON) =175mΩ (Typ.) @ VGS=-4.5V
• Reliable and Rugged
• ESD Protected
• Lead Free and Green Available
Applications
• Power Management in Notebook
Computer.
Pin Description
SOP-8
Absolute Maximum Ratings
Complementary MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current TA=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested TA=25°C
ID
PD
②
RθJA
Continuous Drain Current
(VGS=±10V)
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
N -Channel P Channel
100
±20
150
-55 to 150
3.5
-100
±20
150
-55 to 150
-2.5
①
14
①
-10
3.5 -2.5
2.9 -2
2
1.3
62.5
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C– MAR., 2012
www.ruichips.com
Typical Characteristics(P-Channel)
RU1HC2H
Output Characteristics
Drain-Source On Resistance
-VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
-ID - Drain Current (A)
Gate Threshold Voltage
-VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (°C)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C– MAR., 2012
8
www.ruichips.com
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页数 | 12 页 | ||
下载 | [ RU1HC2H.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
RU1HC2H | N-Channel Advanced Power MOSFET | Ruichips |
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