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零件编号 | RU190N10Q | ||
描述 | N-Channel Advanced Power MOSFET | ||
制造商 | Ruichips | ||
LOGO | |||
1 Page
RU190N10Q
N-Channel Advanced Power MOSFET
Features
· 100V/190A
RDS (ON)=6.5mΩ(Typ.) @ VGS=10V
·Avalanche Rated
· Reliable and Rugged
· Lead Free and Green Devices Available
Applications
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS
·High Speed Power Switching
Pin Description
TO-247
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
IDP 300µs Pulsed Drain Current Tested
ID Continue Drain Current(VGS=10V)
TC=25°C
TC=25°C
TC=100°C
PD Maximum Power Dissipation
RθJC Thermal Resistance -Junction to Case
TC=25°C
TC=100°C
Drain-Source Avalanche Ratings
③ Avalanche Energy ,Single Pulsed
StoraEgeASTemperature Range
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd
Rev. D – JAN., 2010
Rating
100
±25
175
-55 to 175
①
190
②
700
①
190
①
140
312
156
0.48
625
Unit
V
°C
°C
A
A
W
°C/W
mJ
www.ruichips.com
Package Information
TO-247
RU190N10Q
SYMBOL
A
A1
B
b1
b2
c
c1
D
E1
MM
MIN
MAX
4.850
5.150
2.200
2.600
1.000
1.400
2.800
3.200
1.800
2.200
0.500
0.700
1.900
2.100
15.450 15.750
3.500 REF.
INCH
MIN MAX
0,191 0.200
0.087 0.102
0.039 0.055
0.110 0.126
0.071 0.087
0.020 0.028
0.075 0.083
0.608 0.620
0.138 REF.
SYMBOL
E2
L
L1
L2
Φ
e
H
h
MM
MIN MAX
3.600 REF
40.900 41.300
24.800 25.100
20.300 20.600
7.100 7.300
5.450 TYP
5.980 REF.
0.000 0.300
INCH
MIN MAX
0.142 REF
1.610 1.626
0.976 0.988
0.799 0.811
0.280 0.287
0.215 TYP
0.235 REF.
0.000 0.012
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright© Ruichips Semiconductor Co., Ltd
Rev. D– JAN., 2010
8
www.ruichips.com
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页数 | 9 页 | ||
下载 | [ RU190N10Q.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
RU190N10Q | N-Channel Advanced Power MOSFET | Ruichips |
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