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PDF ( 数据手册 , 数据表 ) RU2021H

零件编号 RU2021H
描述 N-Channel Advanced Power MOSFET
制造商 Ruichips
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RU2021H 数据手册, 描述, 功能
Features
• 20V/20A,
RDS (ON) =4m(Typ.) @ VGS=10V
RDS (ON) =5m(Typ.) @ VGS=4.5V
• Super High Dense Cell Design
• Low RDS(ON)
Reliable and Rugged
• Lead Free and Green Available
RU2021H
N-Channel Advanced Power MOSFET
MOSFET
Pin Description
SOP-8
Applications
DC/DC Converter
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
RθJA
Continuous Drain Current(VGS=10V)
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Thermal Resistance-Junction to Ambient
Rating
20
±12
150
-55 to 150
4.4
70
20
16
3.1
2
40
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2012
www.ruichips.com







RU2021H pdf, 数据表
Package Information
SOP-8
RU2021H
SYMBOL
A
A1
A2
b
c
D
MM
MIN MAX
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
INCH
MIN MAX
0.053 0.069
0.004 0.010
0.053 0.061
0.013 0.020
0.006 0.010
0.185 0.200
SYMBOL
E
E1
e
L
θ
MM
MIN MAX
3.800 4.000
5.800 6.200
1.270 (BSC)
0.400 1.270
0° 8°
INCH
MIN MAX
0.150 0.157
0.228 0.244
0.050 (BSC)
0.016 0.050
0° 8°
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2012
8
www.ruichips.com














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