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PDF ( 数据手册 , 数据表 ) WCD8C60

零件编号 WCD8C60
描述 Silicon Controlled Rectifiers
制造商 Winsemi
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WCD8C60 数据手册, 描述, 功能
Features
Repetitive Peak Off-State Voltage:600V
R.M.S On-State Current (IT(RMS)=8A)
Low On-State Voltage(1.4(Typ.)@ITM)
Isolation Voltage(VISO=1500V AC)
WCD8C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for the
application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM/VRRM
IT(AV)
IT(RMS)
ITSM
I2t
di/dt
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current(180° Conduction Angle)
R.M.S On-State Current(180° Conduction Angle)
Non Repetitive Surge Peak on-state Current
I2t Valuefor Fusing
Critical rate of rise of on-state current
ITM=2A;IG=10mA; dIG/dt=100A/µs
(Note(1)
TI =85 °C
TI =85 °C
tp=8.3ms
tp=10ms
tp=8.3ms
TJ=125 °C
Value
600
5
8
73
70
24.5
50
Units
V
A
A
A
A2s
A/
PG(AV)
Average Gate Power Dissipation
TJ=125 °C
1W
IFGM Peak Gate Current
TJ=125 °C
4A
VRGM
Reverse Peak Gate Voltage
TJ=125 °C
5V
VISO Isolation Breakdown voltage(R.M..S)
A,C.1minute
1500
V
TJ Junction Temperature
-40~125
°C
TSTG
Storage Temperature
-40~150
°C
Note1:Although not recommended,off-state Voltages up to 800V may be applied without damage,but the thyristor may
switch to the on-stage.The rate of rise of current should not exceed15A/µs.
Thermal Characteristics
Symbol
Parameter
Value
Min Typ
RθJc Thermal Resistance Junction to Case
--
RθJA Thermal Resistance Junction to Ambient
Rev.A Oct.2010
--
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Max
20
70
Units
/W
/W












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